Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Tianshi Liu"'
Autor:
M. Devyn Mullis, Carla L. Fisher, Skyler B. Johnson, Tianshi Liu, Tithi B. Amin, Sherise Rogers, Kennan DeGruccio, Carma L. Bylund
Publikováno v:
PEC Innovation, Vol 5, Iss , Pp 100319- (2024)
Objective: Cancer treatment misinformation (CTM) is pervasive and impacts patient health outcomes. Cancer clinicians play an essential role in addressing CTM. We previously identified four self-reported responses that characterize the communication p
Externí odkaz:
https://doaj.org/article/4b9b82ac78c54c618e425b9c3d5e7c2b
Autor:
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 129-138 (2022)
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high
Externí odkaz:
https://doaj.org/article/da1ff765b0fc44b8a3a07ceecf6d277a
Autor:
Lan G. Coffman, Taylor J. Orellana, Tianshi Liu, Leonard G. Frisbie, Daniel Normolle, Kent Griffith, Shitanshu Uppal, Karen McLean, Jessica Berger, Michelle Boisen, Madeleine Courtney-Brooks, Robert P. Edwards, Jamie Lesnock, Haider Mahdi, Alexander Olawaiye, Paniti Sukumvanich, Sarah E. Taylor, Ronald Buckanovich
Publikováno v:
JCI Insight, Vol 7, Iss 18 (2022)
BACKGROUND New therapeutic combinations to improve outcomes of patients with ovarian cancer are clearly needed. Preclinical studies with ribociclib (LEE-011), a CDK4/6 cell cycle checkpoint inhibitor, demonstrate a synergistic effect with platinum ch
Externí odkaz:
https://doaj.org/article/0e91eac13b934298960720568bddbce7
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 633-639 (2021)
Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors. Abrupt changes of th
Externí odkaz:
https://doaj.org/article/876b714310a14a6bb666889dc309fd55
Publikováno v:
Applied Sciences, Vol 12, Iss 23, p 12373 (2022)
Obtaining the liquid storage state of oil wells in real time is very important for oilfield production. In this paper, under the premise of fully considering the transformation factors of full-pumping and nonfull-pumping states of oil wells, submerge
Externí odkaz:
https://doaj.org/article/c9996e9d0f9a4f30b669695d73910e94
Autor:
Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal
Publikováno v:
Materials, Vol 15, Iss 19, p 6690 (2022)
A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and reduce the specific ON-resistance (Ron,sp) of 4H-SiC planar power MOSFETs. The Dod and the oct
Externí odkaz:
https://doaj.org/article/183e109deb4c4e8cb85ebb577dd5249e
Autor:
Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Publikováno v:
Materials, Vol 15, Iss 17, p 5995 (2022)
650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial wafers. An orthogonal P+ layout was used for the 650 V SiC MOSFETs to
Externí odkaz:
https://doaj.org/article/93ea600f1c8e4687b84666205a2808f6
Autor:
Hema Lata Rao Maddi, Susanna Yu, Shengnan Zhu, Tianshi Liu, Limeng Shi, Minseok Kang, Diang Xing, Suvendu Nayak, Marvin H. White, Anant K. Agarwal
Publikováno v:
Energies, Vol 14, Iss 24, p 8283 (2021)
This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of thresho
Externí odkaz:
https://doaj.org/article/c2cedf7acf394cbab0e81e339e2b9d89
Autor:
Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586a9927d2584b89f74456de755f7872
https://doi.org/10.1109/irps48203.2023.10117998
https://doi.org/10.1109/irps48203.2023.10117998
Autor:
Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47928671b1cf39b0422988de262f6d79
https://doi.org/10.1109/irps48203.2023.10118276
https://doi.org/10.1109/irps48203.2023.10118276