Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tianshen Zhou"'
Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application
Publikováno v:
Sensors, Vol 20, Iss 15, p 4077 (2020)
To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to
Externí odkaz:
https://doaj.org/article/0304a86a10a74db88de3e0000b41ea49
Publikováno v:
2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Wafer-level chip scale packaging (WLCSP) using TSV technology has widely used in CMOS image sensor (CIS) products in mass production. With more IO and high reliability requirements, the new CIS-WLCSP structure using vertical TSV was developed. Howeve
Publikováno v:
2020 21st International Conference on Electronic Packaging Technology (ICEPT).
Wafer-level chip scale packaging (WLCSP) using Via last technology was widely used in CMOS image sensor (CIS) package. Low aspect-ratio tapered through silicon via (TSV) was fabricated for electrical interconnection in mass production, which is not s
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
Wafer-level chip scale packaging (WLCSP) using tapered through silicon via (TSV) has been widely applied in CMOS image sensor (CIS) in mass production. The mass production technology now is using laser drill and surface landing, which has been shown
Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application
Publikováno v:
Sensors, Vol 20, Iss 4077, p 4077 (2020)
Sensors
Volume 20
Issue 15
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 15
Sensors (Basel, Switzerland)
To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to