Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tianming Bao"'
Publikováno v:
Surface and Interface Analysis. 44:856-862
Forming gas annealing (FGA) is an effective process to repair low efficiency crystalline silicon (c-Si) solar cells with overfired screen-printed paste electrodes. An experimental study was performed to investigate the effect and mechanism of FGA tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125232b3472a297c2f33a1d3d0ad8379
https://doi.org/10.1002/sia.4918
https://doi.org/10.1002/sia.4918
Publikováno v:
ECS Transactions. 27:995-1000
Thermal processing is an integral part of crystalline silicon (c-Si) solar cell manufacturing technology. It is often applied to achieve diffusion, annealing, oxidation, deposition, or reaction process steps in a production environment. This paper re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77986797740f5ed149f0a00fff503480
https://doi.org/10.1149/1.3360741
https://doi.org/10.1149/1.3360741
Autor:
Wendy Montanez-Ortiz, David C. Wong, Maria Bowers, Paul J. Richter, Fred C. Dimock, Frank J. Bottari, Tianming Bao
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Rapid firing of screen-printed metallization is a critical step in the manufacture of crystalline silicon solar cells. Improved cell results are obtained with rapid heat-up and cool-down but optimum conditions have not yet been determined due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0a6d82374af4f864f76426401665c8f
https://doi.org/10.1109/pvsc.2010.5614294
https://doi.org/10.1109/pvsc.2010.5614294
Publikováno v:
Scanning Microscopy 2009.
The logic and memory semiconductor device technology strives to follow the aggressive ITRS roadmap. The ITRS calls for increased 3D metrology to meet the demand for tighter process control at 45nm and 32nm nodes. In particular, gate engineering has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916c5eb02dec2586bd0d5db11447fab5
https://doi.org/10.1117/12.824203
https://doi.org/10.1117/12.824203
Autor:
Minjung Shin, Dongchul Ihm, Chulgi Song, Tianming Bao, Dean Dawson, Vladimir A. Ukraintsev, Moon-Keun Lee
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5feb8bdfa39008ec76449981f89367b1
https://doi.org/10.1117/12.813389
https://doi.org/10.1117/12.813389
Publikováno v:
SPIE Proceedings.
Critical dimension atomic force microscope (CD-AFM or 3D-AFM) is an important metrology technique for full three-dimensional measurements of linewidth CD and sidewall shape. Recent improvements in the 3D-AFM platform design, including high-precision/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79e5e1a9f43b9b8f595b70a8bb1f81eb
https://doi.org/10.1117/12.804482
https://doi.org/10.1117/12.804482
Publikováno v:
SPIE Proceedings.
In advanced DRAM manufacturing, the process scaling to increase memory cell density creates a difficult challenge for conventional optical or SEM metrology tools to characterize wafer surface profiles after plasma etching. Dry plasma etch processes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ef64547e08f44ca2b1101d17a50bd0
https://doi.org/10.1117/12.770789
https://doi.org/10.1117/12.770789
Publikováno v:
Nano Science and Technolgy ISBN: 9783540740841
Scanning probe microscope (SPM) techniques, invented 20 years ago, act as eyes for nanotechnology and nanoscience research and development, for imaging and characterizing surface topography and properties at atomic resolution. Particularly for the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f4c5c7f81e7021963fce44c3611322
https://doi.org/10.1007/978-3-540-74085-8_12
https://doi.org/10.1007/978-3-540-74085-8_12
Autor:
Victor H. Vartanian, Tianming Bao, Mark Caldwell, Brian McLain, Tab A. Stephens, Omar Munoz, John J. Hackenberg
Publikováno v:
SPIE Proceedings.
Accurate, precise, and rapid three-dimensional (3D) characterization of patterning processes in integrated circuit development and manufacturing is critical for successful volume production. As process tolerances and circuit geometries shrink with ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a38632e97522686699ca7c2a97173c7
https://doi.org/10.1117/12.708813
https://doi.org/10.1117/12.708813
Autor:
Tianming Bao, Azeddine Zerrade
Publikováno v:
SPIE Proceedings.
The critical dimension (CD) specification of photomask for semiconductor integrated circuit patterning at a 90nm node and below is becoming unprecedentedly stringent. To meet the tight ITRS roadmap requirement, reticle makers have to rely heavily on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c64f4812f8c522e526a8adb9f82563
https://doi.org/10.1117/12.684767
https://doi.org/10.1117/12.684767