Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Tianli Duan"'
Autor:
Tianli Duan, Kang Xu, Zhihong Liu, Chenjie Gu, Jisheng Pan, Diing Shenp Ang, Rui Zhang, Yao Wang, Xuhang Ma
Publikováno v:
Journal of Materiomics, Vol 6, Iss 3, Pp 557-562 (2020)
A novel facile technique is proposed for fabricating three-dimensional (3D) concave nanolens arrays on a silicon substrate. The technique leverages an inherent characteristic of the polymethyl methacrylate (PMMA) resist during inductively coupled pla
Externí odkaz:
https://doaj.org/article/00182d1921664aa9a89b8ae405d1a4aa
Autor:
Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng, Hongyu Yu
Publikováno v:
AIP Advances, Vol 7, Iss 9, Pp 095317-095317-6 (2017)
Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold
Externí odkaz:
https://doaj.org/article/ee2a1342cd3d497293a1b675e84d7fd2
Publikováno v:
Journal of Raman Spectroscopy. 53:49-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab37e3b3b45da70c011d41404d107e8
https://doi.org/10.1002/jrs.6256
https://doi.org/10.1002/jrs.6256
Publikováno v:
RSC Advances. 10:45037-45041
A novel technique is demonstrated for the fabrication of silicon nanopillar arrays with high aspect ratios. Our technique leverages on an “antenna effect” present on a chromium (Cr) hard mask during ion-coupled plasma (ICP) etching. Randomly dist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23af584b7401025b9571c4cfa776b8a2
https://doi.org/10.1039/d0ra09145f
https://doi.org/10.1039/d0ra09145f
Autor:
Kang Xu, Wang Yao, Ma Xuhang, Tianli Duan, Zhihong Liu, Zhang Rui, Diing Shenp Ang, Chenjie Gu, Jisheng Pan
Publikováno v:
Journal of Materiomics, Vol 6, Iss 3, Pp 557-562 (2020)
A novel facile technique is proposed for fabricating three-dimensional (3D) concave nanolens arrays on a silicon substrate. The technique leverages an inherent characteristic of the polymethyl methacrylate (PMMA) resist during inductively coupled pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16691370fce6ab267fd484a8a4ac200d
https://hdl.handle.net/10356/145437
https://hdl.handle.net/10356/145437
Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device
Publikováno v:
Microelectronics Reliability. 80:24-28
Recent device reliability studies on the metal/high-κ device observed the inter-convertible characteristics of the electron trap levels between the shallow and deep defect states under cyclic positive-bias temperature stressing. Although the oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a539f2c260b169f16afd49043be760d
https://doi.org/10.1016/j.microrel.2017.11.012
https://doi.org/10.1016/j.microrel.2017.11.012
Autor:
Fanming Zeng, Jiang Lingli, Hui Wang, Hongyu Yu, Wenmao Li, Tianli Duan, Guangnan Zhou, Judy Xilin An
Publikováno v:
Electronics, Vol 7, Iss 12, p 377 (2018)
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb9a86da151f848fd331483799a19966
https://www.mdpi.com/2079-9292/7/12/377
https://www.mdpi.com/2079-9292/7/12/377
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P514-P517
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8a01af1f5f2e3e33ac5d5439020899
https://doi.org/10.1149/2.0261609jss
https://doi.org/10.1149/2.0261609jss
Autor:
Lingli Jiang, Shuxiang Zhang, Guangxing Wan, Huilong Zhu, Bo Tang, Hongyu Yu, Jiang Yan, Chao Zhao, Tianli Duan
Publikováno v:
IEEE Electron Device Letters. 36:1267-1270
Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT $\sim 0.8$ nm) high- $\kappa $ layer is investigated, which reveals that overshoot is of great importance to high- $\kappa $ layer leakage degradation. The dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fd698a4324c8bf6afd9e4a921dedf1
https://doi.org/10.1109/led.2015.2490719
https://doi.org/10.1109/led.2015.2490719
Autor:
Hongyu Yu, Tianli Duan
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technol