Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Tianjiao Xin"'
Autor:
Afei Qin, Wenzhe Qin, Fangfang Hu, Meiqi Wang, Haifeng Yang, Lei Li, Chiqi Chen, Binghong Bao, Tianjiao Xin, Lingzhong Xu
Publikováno v:
Globalization and Health, Vol 20, Iss 1, Pp 1-22 (2024)
Abstract Background There is a dearth of research combining geographical big data on medical resource allocation and growth with various statistical data. Given the recent achievements of China in economic development and healthcare, this study takes
Externí odkaz:
https://doaj.org/article/39653b8033214722b5bc29eb29f1cc00
Autor:
Yonghui Zheng, Wenxiong Song, Zhitang Song, Yuanyuan Zhang, Tianjiao Xin, Cheng Liu, Yuan Xue, Sannian Song, Bo Liu, Xiaoling Lin, Vladimir G. Kuznetsov, Ilya I. Tupitsyn, Alexander V. Kolobov, Yan Cheng
Publikováno v:
Advanced Science, Vol 11, Iss 9, Pp n/a-n/a (2024)
Abstract The disorder‐to‐order (crystallization) process in phase‐change materials determines the speed and storage polymorphism of phase‐change memory devices. Only by clarifying the fine‐structure variation can the devices be insightfully
Externí odkaz:
https://doaj.org/article/c016a91b5ff7491c8c92892c8607f498
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
In phase-change memory, writing speed and data retention are two seemingly conflicting performances. Here the authors report hierarchical melt and coordinate bond strategies to stabilize a medium-range crystal-like region and amorphous region, respec
Externí odkaz:
https://doaj.org/article/d3f4fded03444d4e8662a962c4d898bd
Publikováno v:
InfoMat, Vol 3, Iss 9, Pp 1008-1015 (2021)
Abstract Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further ap
Externí odkaz:
https://doaj.org/article/b77cfa4b1df949ef80b8d64ebf948896
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 582 (2023)
Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge2Sb2Te5 alloy (GST) relies on the distinct electrical properties of different states to achieve i
Externí odkaz:
https://doaj.org/article/51dec2f63fcd47ae8cd03da991288de0
PROTOCOL: Examining the best time of day for exercise: A systematic review and network meta‐analysis
Autor:
Meixuan Li, Xiuxia Li, Liujiao Cao, Rui Li, Xiaoqin Wang, Liang Yao, Peijing Yan, Yanfei Li, Xiajing Chu, Huijuan Li, Xue Han, Tianjiao Xin, Kaiyue Chen, Howard White, Kehu Yang
Publikováno v:
Campbell Systematic Reviews, Vol 17, Iss 2, Pp n/a-n/a (2021)
Externí odkaz:
https://doaj.org/article/9b67955c02124f2cbed266b5d2d3c907
Autor:
Qilan Zhong, Yiwei Wang, Yan Cheng, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Yonghui Zheng, Rong Huang, Hangbing Lyu
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1436 (2021)
Hafnia-based ferroelectric (FE) thin films have received extensive attention in both academia and industry, benefitting from their outstanding scalability and excellent CMOS compatibility. Hafnia-based FE capacitors in particular have the potential t
Externí odkaz:
https://doaj.org/article/fe3eabb1fc5447898e6322111203f485
Autor:
Meixuan, Li, Fei, Bai, Liang, Yao, Yu, Qin, Kaiyue, Chen, Tianjiao, Xin, Xiaoya, Ma, YinXia, Ma, Yinjuan, Zhou, Hui, Dai, Rui, Li, Xiuxia, Li, Kehu, Yang
Publikováno v:
Value in Health. 25:1030-1041
This study aimed to conduct a systematic review of cost-utility studies of internet-based and face-to-face cognitive behavioral therapy (CBT) for depression from childhood to adulthood and to examine their reporting and methodological quality.A struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73327906b85000ffb89712ceef3c1463
https://doi.org/10.1016/j.jval.2021.11.1379
https://doi.org/10.1016/j.jval.2021.11.1379
Publikováno v:
Journal of Materials Chemistry C. 10:3585-3592
Phase change memory based on Ta-GST exhibits superior thermal stability and reliability, so it is expected to be used in high-temperature applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697c076a74b2aae14642b46404196804
https://doi.org/10.1039/d1tc06045g
https://doi.org/10.1039/d1tc06045g
Autor:
Yonghui Zheng, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng, Kai Du, Diqing Su, Ruiwen Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, Rong Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426a661f82a31909b84d8fe943a334ae
https://doi.org/10.1109/iedm45625.2022.10019431
https://doi.org/10.1109/iedm45625.2022.10019431