Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Tiancheng Gong"'
Autor:
Dongyang Li, Yi Xiao, Beidou Xi, Tiancheng Gong, Ting Zhang, Nannan Huang, Wenxuan Li, Tianxue Yang
Publikováno v:
Biochar, Vol 5, Iss 1, Pp 1-16 (2023)
Abstract Increased biogas residue related to the rapid development of anaerobic fermentation has become an urgent environmental problem. The pyrolysis of biogas residue into biochar is one of the most promising treatments. In this study, biochar deri
Externí odkaz:
https://doaj.org/article/0942a6b95fd8400280c8aa1b5b001121
Autor:
Danian Dong, Jinru Lai, Yan Yang, Tiancheng Gong, Xu Zheng, Wenxuan Sun, Jie Yu, Shaoyang Fan, Xiaoxin Xu
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2098 (2023)
Stochastic computing (SC) is widely known for its high error tolerance and efficient computing ability of complex functions with remarkably simple logic gates. The noise of electronic devices is widely used to be the entropy source due to its randomn
Externí odkaz:
https://doaj.org/article/0199d679fc6846b28d382a6ee3266e8f
Autor:
Yanwu Chu, Yu Luo, Feng Chen, Chengwei Zhao, Tiancheng Gong, Yanqing Wang, Lianbo Guo, Minghui Hong
Publikováno v:
iScience, Vol 26, Iss 3, Pp 106173- (2023)
Summary: Deep learning method is applied to spectral detection due to the advantage of not needing feature engineering. In this work, the deep neural network (DNN) model is designed to perform data mining on the laser-induced breakdown spectroscopy (
Externí odkaz:
https://doaj.org/article/55834a6d10b8468e82d4788c2b83c18c
Publikováno v:
Engineering, Vol 8, Iss , Pp 25-28 (2022)
Externí odkaz:
https://doaj.org/article/bad071fb1d9b48a7b166262597523da2
Autor:
Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, Ming Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with sel
Externí odkaz:
https://doaj.org/article/f2f741492abf4ccca22fd4e425a534c9
Autor:
Jie Yu, Xiaoxin Xu, Tiancheng Gong, Qing Luo, Danian Dong, Peng Yuan, Lu Tai, Jiahao Yin, Xi Zhu, Xiulong Wu, Hangbing Lv, Ming Liu
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Abstract Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx bi-layer structure by using a
Externí odkaz:
https://doaj.org/article/7ee6b4b8ee664d50b8088691c5f2d980
Autor:
Jie Yu, Woyu Zhang, Danian Dong, Wenxuan Sun, Jinru Lai, Xu Zheng, Tiancheng Gong, Yi Li, Dashan Shang, Guozhong Xing, Xiaoxin Xu
Publikováno v:
Micromachines, Vol 13, Iss 2, p 308 (2022)
In embedded neuromorphic Internet of Things (IoT) systems, it is critical to improve the efficiency of neural network (NN) edge devices in inferring a pretrained NN. Meanwhile, in the paradigm of edge computing, device integration, data retention cha
Externí odkaz:
https://doaj.org/article/76882724e16548aea3f4a94a6ba64ea6
Publikováno v:
Advances in Mechanical Engineering, Vol 11 (2019)
The mechanical reliability problem of passenger car cockpit facilities layout is increasingly complex and has potential and uncertain risks for human safety while the number of private cars is increasing. A new system of layout design optimization is
Externí odkaz:
https://doaj.org/article/1c32a761775349e3af4ccb1980ba3f87
Autor:
Yuan Wang, Yang Yang, Pengfei Jiang, Shuxian Lv, Boping Wang, Yuting Chen, Yaxin Ding, Tiancheng Gong, Bing Chen, Ran Cheng, Xiao Yu, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 44:943-946
Autor:
Pengfei Jiang, Yang Yang, Wei Wei, Tiancheng Gong, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Boping Wang, Meiwen Chen, Yan Wang, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 44:602-605