Zobrazeno 1 - 10
of 144
pro vyhledávání: '"Tian-Li Wu"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN metal–insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with var
Externí odkaz:
https://doaj.org/article/d57d1e5a071d44e0877f3e71703ba9b8
Autor:
Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Catherine Langpoklakpam, Thien Sao Ngo, Pei-Jung Wang, Yu-Cheng Kao, Yi-Kai Hsiao, Niall Tumilty, Hao-Chung Kuo, Tian-Li Wu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100499- (2024)
Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3
Externí odkaz:
https://doaj.org/article/661d2bf1d63c48fda8b5fd86ed82dea0
Publikováno v:
IEEE Access, Vol 11, Pp 70168-70173 (2023)
In this work, the methodology using Graph Attention Network (GAT) for the reserve design in GaN power MIS-HEMTs based on hand-drawn characteristics is demonstrated for the first-time. The hand-drawn ID-VG characteristic is constructed by Ramer-Dougla
Externí odkaz:
https://doaj.org/article/5685da3d39fc4d90a1a3d008a5cb023a
Autor:
Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM‐based synaptic cores suffer from the trade‐off between bit density a
Externí odkaz:
https://doaj.org/article/7056e755c1db4aa49054c6baa0945bda
Autor:
Quang-Khoi Nguyen, Yi-Jou Lin, Ching Sun, Xuan-Hao Lee, Shih-Kang Lin, Chi-Shou Wu, Tsung-Hsun Yang, Tian-Li Wu, Tsung-Xian Lee, Chao-Hsin Chien, Yeh-Wei Yu, Ching-Cherng Sun
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract In this paper, we propose and demonstrate to use of a single reflector with 68 segments to project vehicle low beam and high beam with the use of a GaN-based mini-LED matrix, which is a 5 × 6 LED die array. The design of the reflector is ba
Externí odkaz:
https://doaj.org/article/7174a57153da49d9ae5cab3067a6b6b1
Autor:
Apoorva Sood, Dong-Sing Wuu, Fu-Gow Tarntair, Ngo Thien Sao, Tian-Li Wu, Niall Tumilty, Hao-Chung Kuo, Singh Jitendra Pratap, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 17, Iss , Pp 100346- (2023)
β-Ga2O3 epilayers with a 210 nm thickness were successfully grown on c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Highly resistive unintentionally doped (UID) epilayers are studied, as are Si ion-implantated samples
Externí odkaz:
https://doaj.org/article/6a918dff8a3345968b2ea1de2b4b5d98
Autor:
Cheng-Hung Wu, Nicolo' Ronchi, Kuan-Chi Wang, Yu-Yun Wang, Sean Mcmitchell, Kaustuv Banerjee, Geert van Den Bosch, Jan van Houdt, Tian-Li Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 109-114 (2022)
In this work, the impacts of various pulsing schemes on endurance are comprehensively investigated. Trapezoidal and triangular waveforms are considered in endurance cycling tests. For endurance cycling with the trapezoidal waveforms, different rising
Externí odkaz:
https://doaj.org/article/e4d821ccce5643028afd7bff7039f763
Autor:
Ting-Yu Chang, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, Tian-Li Wu
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2104 (2023)
In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping spec
Externí odkaz:
https://doaj.org/article/91fc261f328846a89ac69a003a88a21d
Autor:
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 2-5 (2021)
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a $\text
Externí odkaz:
https://doaj.org/article/e88bdee7d92a42968b3d4ce3ce86174b
Autor:
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 687-690 (2021)
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN layer are i
Externí odkaz:
https://doaj.org/article/62d9ad8fc9cf4cc3a126b23577723831