Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Tian Lilin"'
Publikováno v:
Hangkong gongcheng jinzhan, Vol 14, Iss 5, Pp 70-77 (2023)
Aiming at various genetic algorithms commonly used in composite layer optimization, it is difficult to comprehensively consider complex engineering constraints such as surface 45°, layering ratio, and continuous layer number limit, in this paper, an
Externí odkaz:
https://doaj.org/article/3690187ae1804e139ecc7b4005885932
Publikováno v:
In Superlattices and Microstructures 2004 36(4):869-875
Publikováno v:
In Solid State Electronics 2000 44(9):1697-1702
Publikováno v:
In Solid State Electronics 2000 44(3):401-407
Publikováno v:
Solid-State Electronics. 49:1581-1588
In this paper, an approach to modeling the tunneling current along the channel, i.e. the 2D quantum mechanical (QM) effects, on the charge distribution in the carrier confinement direction is developed using the concept of “locality” and the anal
Publikováno v:
2008 2nd IEEE International Nanoelectronics Conference.
A compact model of channel electron mobility for strained-silicon is suggested in this paper. The model can be used for nano scale simulation since thin-film quantum confinement is considered. It is suitable for / channel nMOSFET.
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
The thermal conduction in ultra-thin single crystal silicon layers has a strong influence in self-heating of deep submicron transistors. Precise measurements of lateral thermal conductivity of single crystal silicon layers have great importance for t
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
An analytical charge density model considering 1D quantum mechanical (QM) effect perpendicular to the channel, which has substantial impact on the characteristics of sub-100nm bulk silicon MOSFETs is developed. The model yields excellent accuracy com
Publikováno v:
2005 6th International Conference on ASIC.
With scaling down of semiconductor devices, it's more important to simulate their characteristics by solving the Schrodinger and Poisson equations self-consistently. It is necessary to introduce new method to accelerate the convergence of nonlinear e
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
AlGaN/GaN HEMTs, also referred to MODFETs, have been a subject of intense recent investigation and have emerged as attractive candidates for high voltage, high-power operation at microwave frequencies for its high peak electron velocity, saturation v