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pro vyhledávání: '"Tiago M. L. Teixeira"'
Autor:
Juan Bevan, Tiago M. L. Teixeira
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2017:000213-000217
The goal of this study was to achieve an improvement on power conversion based on SiC High Power Electronic devices at high temperature (+220°C). Two different devices (a SiC Schottky Diode & a Schottky Diode Bridge Rectifier) were studied using dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51fc0127b6e26e0236b0ef7567f09b54
https://doi.org/10.4071/2380-4491.2017.hiten.213
https://doi.org/10.4071/2380-4491.2017.hiten.213
