Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tiago F. de Cantalice"'
Autor:
Thales Borrely, Ahmad Alzeidan, Marcelo D. de Lima, Gabriel Jacobsen, Tao-Yu Huang, Yu-Chen Yang, Tiago F. de Cantalice, Rachel S. Goldman, M. D. Teodoro, Alain A. Quivy
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
Two infrared photodetectors based on submonolayer quantum dots, having a different InAs coverage of 35% and 50%, were grown, processed and tested. The detector with the larger coverage yielded a specific detectivity of 1.13×1011 cm Hz1/2 W-1 at 12K,
Autor:
Raja S. R. Gajjela, PM Paul Koenraad, Arthur L. Hendriks, A. A. Quivy, Tiago F. de Cantalice, Ahmad Alzeidan
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Physical Review Materials, 4(11):114601. American Physical Society
Physical Review Materials
Universidade de São Paulo (USP)
instacron:USP
Physical Review Materials, 4(11):114601. American Physical Society
Physical Review Materials
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submono-layer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2×4) andc(4×4) surface reconstructions. Multiple laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c542bf62a7006a96d82b40853deba7bd
http://arxiv.org/abs/2008.11711
http://arxiv.org/abs/2008.11711
Publikováno v:
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
A submonolayer quantum dot infrared photodetector (SML-QDIP) was grown on a GaAs(001) substrate by molecular beam epitaxy and processed using conventional optical lithography, wet etching and electronbeam metallization. Additionally, a side of the de
Publikováno v:
Materials Research Express. 6:126205