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Akademický článek

Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures

Autor: Maolin Zhang, Wanyu Ma, Zeng Liu, Lili Yang, Shan Li, Yufeng Guo, Weihua Tang

Publikováno v: Results in Physics, Vol 54, Iss , Pp 107110- (2023)

Given the critical impact of high-temperature environments on the detection performance and stability of deep ultraviolet (DUV) photonic devices, especially in urgent demands from fields including high-temperature industries and flame detection, the

Externí odkaz: https://doaj.org/article/f6b843ea91c142f1b10ded0c6985db4f

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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach

Autor: Kalha, Curran, Reisinger, Michael, Thakur, Pardeep. K., Lee, Tien-Lin, Venkatesan, Sriram, Isaacs, Mark, Palgrave, Robert G., Zechner, Johannes, Nelhiebel, Michael, Regoutz, Anna

Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy

Externí odkaz: http://arxiv.org/abs/2201.08074