Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ti-Wen Chen"'
Autor:
Ti-Wen Chen, 陳帝文
103
Taiwan is located at the eastern edge of the Eurasian Continent. Mercury accompaning with other air pollutants could be long-range transported to Japan, Korea, Hawaii, and even arrived the western coast of American Continent. Moreover, it co
Taiwan is located at the eastern edge of the Eurasian Continent. Mercury accompaning with other air pollutants could be long-range transported to Japan, Korea, Hawaii, and even arrived the western coast of American Continent. Moreover, it co
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99316503528984261145
Autor:
Ti-Wen Chen, 陳文
87
Randomization on testing in sequential logic circuits is more complicated and difficult than that on combinational logic circuits. In this thesis, it aims to adopt the method of Markov chain to analyze the random testability for detecting a f
Randomization on testing in sequential logic circuits is more complicated and difficult than that on combinational logic circuits. In this thesis, it aims to adopt the method of Markov chain to analyze the random testability for detecting a f
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54400850713916137407
Publikováno v:
SSRN Electronic Journal.
Autor:
Kuang-Chao Chen, Wen-Jer Tsai, T.W. Lin, W. P. Lu, Ti-Wen Chen, T.C. Lu, S.H. Ku, Chih-Yuan Lu, C.W. Lee, Tahui Wang, C.H. Cheng
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
Endurance of floating gate flash memories at 19nm node and beyond is studied comprehensively. Experiments reveal that the random telegraph noise (RTN) would degrade the read margin with a tail, which quickly reshapes into a symmetric Gaussian form in
Autor:
Shuo-Nan Hung, Meng-Fan Chang, Jo-Yu Hsu, Yih-Shan Yang, Chi-Yu Hung, Yen-Hao Shih, Tzung Shen Chen, Tzu-Neng Lai, Yao-Jen Kuo, Chun-Hsiung Hung, Shin-Jang Shen, Chung Kuang Chen, Ti-Wen Chen, Chih-Yuan Lu, Hang-Ting Lue, Shih-Lin Huang
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1491-1501
3D vertical-gate (3DVG) NAND flash is a promising candidate for next-generation high-density nonvolatile memory. Cross-layer process variation renders 3DVG NAND susceptible to decreased speeds, yield, and reliability. This can be attributed to (a) cr
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
We introduce a novel programming algorithm that is particularly suitable for 3D NAND. With larger design rules and charge trapping (CT) device 3D NAND is much less sensitive to interference therefore should not use elaborate and costly algorithms des
Autor:
Chia-Jung Chiu, Ti-Wen Chen, Chih-Shen Chang, Chih-Yuan Lu, Yen-Hao Shih, Chih-Wei Hu, Tzung Shen Chen, Hang-Ting Lue, Shih-Lin Huang, Yan-Ru Chen, Wen-Wei Yeh, Kuo-Pin Chang, S. C. Huang, Chun-Hsiung Hung, Yi-Hsuan Hsiao, Shuo-Nan Hung, Shih-Hung Chen, Chih-Chang Hsieh, Guan-Ru Lee, Chieh-Fang Chen
Publikováno v:
2012 International Electron Devices Meeting.
The design architecture for 3D vertical gate (VG) NAND Flash is discussed in detail. With the unique structure of 3D VG and its decoding method, we have developed several important design innovations to optimize this technology: (1) “Shift-BL scram
Autor:
Ti-Wen Chen, Leng-Hong Teo
Publikováno v:
Aquaculture Research. 24:109-117
The aim of this work was to investigate the factors that affect the metabolic rates of guppies, Poecilia reticulata Peters, by measuring the oxygen uptakes of guppies individually or in groups in closed vessels to simulate the actual packaging condit
Autor:
Leng-Hong Teo1, Ti-Wen Chen1
Publikováno v:
Aquaculture & Fisheries Management. Jan1993, Vol. 24 Issue 1, p109-117. 9p. 1 Chart, 7 Graphs.