Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ti Ning"'
Publikováno v:
AOPC 2020: Infrared Device and Infrared Technology.
With the development of infrared technology, large-array infrared focal plane detector is getting more and more popular. In order to solve the problem of reduced reliability when the cooling head is packaged with large-array infrared detector, a new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c688c4be13b04f796b41fe15fef6aac
https://doi.org/10.1117/12.2579724
https://doi.org/10.1117/12.2579724
Publikováno v:
AOPC 2020: Infrared Device and Infrared Technology.
At present, HgCdTe arrays has been commonly used in photodetectors for infrared detection in space system, where they are exposed to the space radiation environment. For high radiation-tolerance and the optimum performance of the detector, surface-pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d832186fdd00c26acceb9e662560ff1
https://doi.org/10.1117/12.2579540
https://doi.org/10.1117/12.2579540
Publikováno v:
Journal of Luminescence. 130:1189-1193
Gallium-doped tin oxide (SnO2:Ga) films have been prepared on α-Al2O3 (0 0 0 1) substrates at 500 °C by the pulse mode metalorganic chemical vapor deposition (MOCVD) method. The relative amount of Ga (Ga/(Ga+Sn) atomic ratio) varied from 3% to 15%.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59eb0722b01ceb4f8c803d6e3416184b
https://doi.org/10.1016/j.jlumin.2010.02.019
https://doi.org/10.1016/j.jlumin.2010.02.019
Publikováno v:
Advanced Materials Research. :763-766
12% Gallium-doped tin oxide (SnO2:Ga) single crystalline films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600°C. According to XRD patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc974f15badf592d88cea1a1ee996ff1
https://doi.org/10.4028/www.scientific.net/amr.79-82.763
https://doi.org/10.4028/www.scientific.net/amr.79-82.763
Publikováno v:
Advanced Materials Research. :787-790
Copper-tin-oxide thin films have been prepared on quartz substrates by the magnetron sputtering method. The structural,optical and electrical properties were investigated. The prepared samples were amorphous, CuSnO3 single crystalline grains with per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1a9951ded8e51e5ede4ede311d5cdc
https://doi.org/10.4028/www.scientific.net/amr.79-82.787
https://doi.org/10.4028/www.scientific.net/amr.79-82.787
Publikováno v:
Advanced Materials Research. :759-762
1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d293dfb4fcb58da770538b09782a51
https://doi.org/10.4028/www.scientific.net/amr.79-82.759
https://doi.org/10.4028/www.scientific.net/amr.79-82.759
Publikováno v:
Advanced Materials Research. :771-774
1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f55172cbb2a17d1d427468f7ae1bd9
https://doi.org/10.4028/www.scientific.net/amr.79-82.771
https://doi.org/10.4028/www.scientific.net/amr.79-82.771