Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thuy T. T. Pham"'
Autor:
Anh N. L. Phan, Thuy T. T. Pham, Nghia Huynh, Tuan M. Nguyen, Cuc T. T. Cao, Duong T. Nguyen, Duc T. Le, Chi‐Bao Bui
Publikováno v:
Molecular Genetics & Genomic Medicine, Vol 8, Iss 5, Pp n/a-n/a (2020)
Abstract Background Lipopolysaccharide‐responsive and beige‐like anchor (LRBA) deficiency is a rare autosomal recessive common variable immunodeficiency (CVID), affecting 1:25,000–1:50,000 people worldwide. Biallelic mutations in the gene LRBA
Externí odkaz:
https://doaj.org/article/8bde6b5ce82d483bbbbca531205f69f2
Publikováno v:
The journal of physical chemistry. B. 120(16)
This study investigated the relationship between molecular arrangement and surface tension of water mixtures with methanol and ethanol. It has been found that the molecular structure of interfacial zone was deterministically correlated to alcohol con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf7cd71c3b350239b89f06a536d4edf3
https://pubmed.ncbi.nlm.nih.gov/27054524
https://pubmed.ncbi.nlm.nih.gov/27054524
Publikováno v:
Journal of the Korean Physical Society. 53:892-896
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29003064dfe9983bc0e44de82bb69924
https://doi.org/10.3938/jkps.53.892
https://doi.org/10.3938/jkps.53.892
Publikováno v:
Surface and Coatings Technology. 202:5617-5620
Si x Ny thin films were deposited by PECVD using SiH 4 /NH 3 /Ar gases and by biasing the substrate at -50 V as a function of the ratio of R (R-NH3/(NH3+SiH4)) at a low temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d3f6e64de7fae6e6501bb58e70cd6c
https://doi.org/10.1016/j.surfcoat.2008.06.034
https://doi.org/10.1016/j.surfcoat.2008.06.034
Publikováno v:
Journal of The Electrochemical Society. 155:D163
SiO 2 -like thin films were deposited at low temperatures ( 95% could be obtained with a deposition rate of approximately 21 nm/min.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7edfed1dba1c674321992a0f9c9f12b
https://doi.org/10.1149/1.2822963
https://doi.org/10.1149/1.2822963
Publikováno v:
Journal of the Korean Physical Society. 51:1934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811c305d269e6367aed1567fdb37c579
https://doi.org/10.3938/jkps.51.1934
https://doi.org/10.3938/jkps.51.1934