Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Thulasi Raman, K. H."'
Autor:
Illarionov, Anatoliy G., Stepanov, Stepan I., Naschetnikova, Inna A., Popov, Artemiy A., Soundappan, Prasanth, Thulasi Raman, K. H., Suwas, Satyam
Publikováno v:
Materials (1996-1944); Feb2023, Vol. 16 Issue 3, p991, 30p
Publikováno v:
ECS Meeting Abstracts. :326-326
A process for fabricating thin film solid state battery on four-inch silicon wafer has been developed in a custom built hybrid PVD configuration in a single chamber attached to a glove box. In this work, we have performed six layer deposition, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76e45ee4580da6d60ed17b2d70037c7
https://doi.org/10.1149/ma2018-01/3/326
https://doi.org/10.1149/ma2018-01/3/326
Autor:
Thulasi Raman K H
Publikováno v:
ECS Meeting Abstracts. :1132-1132
In this study, to accommodate higher interfacial shear stress between alumina coating system and metallic substrate, coating modulus and compressive stresses are graded from interface to 80 µm thickness. . The modulus gradient is achieved by varying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfe2c6b7fecfb4104542cec79ffa02d
https://doi.org/10.1149/ma2018-01/15/1132
https://doi.org/10.1149/ma2018-01/15/1132
Publikováno v:
Materials Research Society Symposium Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73edf061c50dea9f3e0aa58ede2adaa5
https://doi.org/10.1557/proc-1214-u04-51
https://doi.org/10.1557/proc-1214-u04-51