Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Thulani Thokozani Hlatshwayo"'
Autor:
H.A.A. Abdelbagi, Thulani Thokozani Hlatshwayo, Johan B. Malherbe, S.A. Adeojo, V.A. Skuratov, T.M. Mohlala
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 511:18-29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1553dcabacdb71fbbfacdcf2190df19f
https://doi.org/10.1016/j.nimb.2021.11.016
https://doi.org/10.1016/j.nimb.2021.11.016
Autor:
M. Ismail, O.S. Odutemowo, Thulani Thokozani Hlatshwayo, Kofi Ahomkah Annan, Johan B. Malherbe, V.A. Skuratov, Mbuso Mlambo, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 502:66-72
The effects of swift heavy ion irradiation on implanted glassy carbon, the modification and migration of indium after vacuum annealing have been investigated. Radiation damage was introduced to the glassy carbon substrates after room temperature impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8ea8e2c01f7ff899c01ebac919b877
https://doi.org/10.1016/j.nimb.2021.06.011
https://doi.org/10.1016/j.nimb.2021.06.011
Autor:
Johan B. Malherbe, Thulani Thokozani Hlatshwayo, O.S. Odutemowo, Elke Wendler, M.Y.A. Ismail, Z.A.Y. Abdalla, Vladimir A. Skuratov, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 489:11-19
The effect of high temperature annealing and swift heavy ion irradiation (SHI) on the migration behaviour of xenon (Xe) implanted into glassy carbon (GC) have been investigated. GC substrates were implanted with 200 keV Xe ions to a fluence of 1 × 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cbe6d4f7a293d486b99a8c4d88a655b
https://doi.org/10.1016/j.nimb.2020.12.012
https://doi.org/10.1016/j.nimb.2020.12.012
Autor:
M.Y.A. Ismail, Johan B. Malherbe, Z.A.Y. Abdalla, Thulani Thokozani Hlatshwayo, Elke Wendler, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 487:30-37
This study reviews the migration behaviour of selenium in polycrystalline SiC, which acts as the main diffusion barrier in the coated fuel particles for Very High Temperature Reactors. Se ions of 200 keV were implanted into polycrystalline SiC wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc0881e8094a022fe973ae4028a6db7
https://doi.org/10.1016/j.nimb.2020.08.022
https://doi.org/10.1016/j.nimb.2020.08.022
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 478:260-268
In this work, the effect of radiation damage on the migration behaviour of europium (Eu) implanted into polycrystalline SiC was investigated. Polycrystalline Silicon Carbide (SiC) substrates were separately implanted with europium (Eu) ions of 270 ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ba9c721a4e8db6b6e72a59250c639c0
https://doi.org/10.1016/j.nimb.2020.07.013
https://doi.org/10.1016/j.nimb.2020.07.013
Autor:
Mbuso Mlambo, E.G. Njoroge, V.A. Skuratov, Setumo Victor Motloung, M. Msimanga, Johan B. Malherbe, N. Mtshonisi, J.H. O'Connell, Thulani Thokozani Hlatshwayo
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 472:7-13
The effect of silver (Ag) and strontium (Sr) ions implanted into polycrystalline (SiC) was investigated. One batch of polycrystalline SiC wafers was implanted with 360 keV silver ions (Ag-SiC) and another implanted with 360 keV strontium ions (Sr-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4551da823dc5559ad84f94d28107fe87
https://doi.org/10.1016/j.nimb.2020.03.035
https://doi.org/10.1016/j.nimb.2020.03.035
Autor:
Thulani Thokozani Hlatshwayo, Moshawe J. Madito, Setumo Victor Motloung, T.F. Mokgadi, Mbuso Mlambo, V.A. Skuratov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 461:63-69
Zirconium nitrate (ZrN) layers of about 20 µm were deposited onto silicon (Si) substrates at room temperature (RT) using a vacuum arc deposition technique. Some of the as-deposited samples were irradiated with Eu (360 keV) to a fluence of 1.0 × 101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74855a61489ade3bb352ad0cf5e8a28
https://doi.org/10.1016/j.nimb.2019.09.031
https://doi.org/10.1016/j.nimb.2019.09.031
Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC
Autor:
Thulani Thokozani Hlatshwayo, Mbuso Mlambo, Vladimir A. Skuratov, Johan B. Malherbe, J.H. O'Connell, Setumo Victor Motloung, H.A.A. Abdelbagi, E.G. Njoroge
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 461:201-209
Silver (Ag) ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 cm−2 at room temperature. Some of the as-implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 at room temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e9ede2587e2e0998c93ca03e954d43
https://doi.org/10.1016/j.nimb.2019.10.002
https://doi.org/10.1016/j.nimb.2019.10.002
Autor:
Jackie M. Nel, Moshawe J. Madito, Mmantsae Diale, F.D. Auret, Thulani Thokozani Hlatshwayo, Shandirai Malven Tunhuma
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:119-124
We have used confocal Raman spectroscopy, atomic force microscopy (AFM), Binary collision approximations and Deep level transient spectroscopy (DLTS) to study the defects introduced in n-type 4H-SiC by 167 MeV Xe26+ ions (swift heavy ions (SHIs)). Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df411d68caee22931e77bd1c09aec21d
https://doi.org/10.1016/j.nimb.2018.11.046
https://doi.org/10.1016/j.nimb.2018.11.046
Autor:
Moshawe J. Madito, Thulani Thokozani Hlatshwayo, Ncholu I. Manyala, C. Mtshali, Zakhelumuzi Khumalo, Vladimir A. Skuratov
Publikováno v:
Applied Surface Science. 493:1291-1298
The nitrogen-doped, n-type 4H-SiC with 6 μm thick epitaxial layer was irradiated at the perpendicular incidence and room temperature by 167 MeV Xe+26 ions to a fluence of 5 × 1012 cm−2. The Monte Carlo simulation code, Stopping and Range of Ions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48cb78236d1654810bbe677fd0004e21
https://doi.org/10.1016/j.apsusc.2019.07.147
https://doi.org/10.1016/j.apsusc.2019.07.147