Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Thuc Dam"'
Autor:
Maryvonne Chalony, Lawrence S. Melvin, Rainer Zimmermann, Bernd Küchler, Emilie Viasnoff, Robert Scarmozzino, Daniel Herrmann, Yves Saad, Phil Stopford, Thuc Dam, Ulrich Klostermann, Wolfgang Demmerle, Al Blais, Remco Stoffer
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Autor:
Zachary A. Levinson, Thuc Dam, Pervaiz Kareem, C.Jay Lee, Wolfgang Demmerle, Ulrich Klostermann
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Jun Zhu, Lin Wang, Bradley J. Falch, Thuc Dam, Yongdong Wang, Petrisor Panaite, Mingchao Ji, Ming Su
Publikováno v:
DTCO and Computational Patterning II.
Publikováno v:
DTCO and Computational Patterning II.
Autor:
Zachary A. Levinson, Thuc Dam, Paul Pfaeffli, C.Jay Lee, Wolfgang Hoppe, Ulrich Klostermann, Kevin Lucas
Publikováno v:
DTCO and Computational Patterning II.
Publikováno v:
Design-Process-Technology Co-optimization XV.
In this work, we demonstrate our first-principles based methodology to include atomistic level simulations to evaluate the promise of different metals on the performance of MOL/BEOL interconnects. The specific metals that we focus on include Cu, Ru (
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Over the last several technology generations the slower feature scaling has been increasingly complemented by DTCO. Initially, DTCO was employed at a smaller scale to decide which technology modules to introduce to achieve target PPAC (Power-Performa
Autor:
Lawrence S. Melvin, Yongdong Wang, Zac Levinson, Thuc Dam, Rui Chen, Yayi Wei, Jay Lee, Rongbo Zhao, Lisong Dong, Jianjun Jia, Taian Fan
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
In EUV lithography, the short wavelength and residual mirror surface roughness increase the flare levels across the slit. As a key research point, the flares of different exposure fields are carefully discussed by numerical simulation. To ensure the
Autor:
Jaeseung Choi, Guangming Xiao, Jung-Hoe Choi, Thuc Dam, Jinhyuck Jun, Hyunjo Yang, Chanha Park, Munhoe Do, Se-Young Oh, Dong Chan Lee, Jaehee Hwang, Kevin Lucas
Publikováno v:
SPIE Proceedings.
Many different advanced devices and design layers currently employ double patterning technology (DPT) as a means to overcome lithographic and OPC limitations at low k1 values. Certainly device layers with k1 value below 0.25 require DPT or other pitc
Publikováno v:
SPIE Proceedings.
New inverse methods such as model-based SRAF placement, model-based SRAF optimization, and full main + assist feature ILT are well known to have considerable benefits in finding flexible mask pattern solutions to improve process window and CD control