Zobrazeno 1 - 10
of 5 797
pro vyhledávání: '"Through silicon via"'
Autor:
Hou, Da1,2 (AUTHOR) houd5@mail2.sysu.edu.cn, Wang, Lihui1 (AUTHOR) wanglh65@mail2.sysu.edu.cn, Lin, Qiuhua1 (AUTHOR) linqh26@mail2.sysu.edu.cn, Xu, Xiaodong2,3 (AUTHOR) liy17@pcl.ac.cn, Li, Yin2 (AUTHOR), Luo, Zhiyong1,2,4 (AUTHOR) luozhy57@mail.sysu.edu.cn, Chen, Hao2 (AUTHOR) luozhy57@mail.sysu.edu.cn
Publikováno v:
Sensors (14248220). Feb2024, Vol. 24 Issue 4, p1291. 15p.
Autor:
Kim, Tae Hyeong1 (AUTHOR), Kang, Dongchan2 (AUTHOR), Kim, Jeong Nyeon3 (AUTHOR), Park, Ik Keun4 (AUTHOR) ikpark@seoultech.ac.kr
Publikováno v:
Materials (1996-1944). Jan2023, Vol. 16 Issue 2, p860. 12p.
Autor:
Marchack, Nathan, Joseph, Eric A.
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Nov2024, Vol. 37 Issue 4, p453-457, 5p
Autor:
Xu, Shiqi1 (AUTHOR), Zhang, Yuanle1 (AUTHOR), Li, Qiang1 (AUTHOR) liqiang@njust.edu.cn, Chen, Xuemei1 (AUTHOR) xuemeichen@njust.edu.cn
Publikováno v:
Applied Thermal Engineering. Jan2025:Part C, Vol. 258, pN.PAG-N.PAG. 1p.
Autor:
Rodríguez‐Velásquez, Yojanes1 (AUTHOR) yojand@inaoep.mx, Murphy‐Arteaga, Roberto S.1 (AUTHOR), Torres‐Torres, Reydezel1 (AUTHOR)
Publikováno v:
International Journal of RF & Microwave Computer-Aided Engineering. Oct2021, Vol. 31 Issue 10, p1-9. 9p.
Autor:
Wang, Fengjuan1 (AUTHOR) wfjxiao4@163.com, Li, Yue1 (AUTHOR), Yu, Ningmei1 (AUTHOR), Yang, Yuan1 (AUTHOR)
Publikováno v:
International Journal of Numerical Modelling. May/Jun2021, Vol. 34 Issue 3, p1-10. 10p.
Publikováno v:
Yuanzineng kexue jishu, Vol 8, Iss 58, Pp 1789-1796 (2024)
With the development of Moore’s law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional (3-D) integrated microsystem. TSV technology provides tremendous advantages, such as lower interconnect lat
Externí odkaz:
https://doaj.org/article/46347f6776cf4f74b0e895dceda116dd
Autor:
Arjun Moothedath, Zhong Ren
Publikováno v:
Micro and Nano Engineering, Vol 25, Iss , Pp 100288- (2024)
This study explores the development and characterization of plasma etching for sub-micron features using a nonlinear evolution of parameter in a three-step cyclic Bosch process. Comparing this nonlinear approach with traditional linear parameter evol
Externí odkaz:
https://doaj.org/article/c0fec81996d14d5aaba495f04fafaeb5
Autor:
Li, Haiwang1 (AUTHOR) 09620@buaa.edu.cn, Zhu, Kaiyun1 (AUTHOR) zhu13121225835@buaa.edu.cn, Lei, Kaibo1 (AUTHOR) 773968630@qq.com, Xu, Tiantong1 (AUTHOR) xutiantong@buaa.edu.cn, Wu, Hanxiao2 (AUTHOR) wuhanxiao7652@buaa.edu.cn
Publikováno v:
IEEE Transactions on Power Electronics. Sep2022, Vol. 37 Issue 9, p10075-10080. 6p.