Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Thorsten U. Kampen"'
Autor:
Klaus Hermann, Karsten Horn, Philipp Martin Schmidt-Weber, Thorsten U. Kampen, Ralph Püttner, Christine Kolczewski
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena
Near-edge x-ray absorption fine structure spectra of the cis- and trans- isomers of stilbene in the gas phase reveal clear differences, which are analyzed by results from density-functional theory calculations using the transition potential approach.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43e18533bafe5d8279ae22010b7ca8f0
https://hdl.handle.net/11858/00-001M-0000-002C-4EBB-011858/00-001M-0000-002C-4E5C-621.11116/0000-0004-62A2-6
https://hdl.handle.net/11858/00-001M-0000-002C-4EBB-011858/00-001M-0000-002C-4E5C-621.11116/0000-0004-62A2-6
Autor:
Thorsten U. Kampen
Publikováno v:
Low Molecular Weight Organic Semiconductors
Autor:
Thorsten U. Kampen
Publikováno v:
Low Molecular Weight Organic Semiconductors
Autor:
Z Bao, Franz Hennies, Denis Céolin, O. Travnikova, Maria Novella Piancastelli, Karsten Horn, Thorsten U. Kampen
Publikováno v:
Applied Surface Science
Electronic and geometric properties of the adsorbate-substrate complex formed upon adsorption of methyl oxirane on Si(1 0 0)2 x 1 at room temperature is reported, obtained with synchrotron radiation-induced valence and core-level photoemission. A rin
Publikováno v:
Surface Science. 601:694-698
Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal
Autor:
Thorsten U. Kampen
Publikováno v:
Applied Physics A. 82:457-470
Organic semiconductors have attracted increasing interest owing to their potential application in various electronic and opto-electronic devices. Here, interfaces play an important role since they are responsible for the accumulation of charge carrie
Publikováno v:
Synthetic Metals. 154:165-168
Raman spectroscopy is employed to investigate in situ the structural properties and the morphology of 3,4,9,10-Perylene-TetraCarboxylic DiAnhydride (PTCDA) films deposited onto S-GaAs(100) substrates at various temperatures. Additional two-dimensiona
Autor:
A. Kobitski, Kanako Seki, Georgeta Salvan, Thorsten U. Kampen, Yoko Sakurai, Takahiro Yokoyama, Dietrich R. T. Zahn, Hisao Ishii, Yoshinobu Hosoi, Yukio Ouchi
Publikováno v:
Synthetic Metals. 154:161-164
The geometrical structure of potassium doped Alq 3 (tris-(8-hydroxyquinoline) aluminum) and its interaction with potassium were studied using infrared reflection-absorption spectroscopy (IRRAS), surface enhanced Raman scattering and DFT calculations.
Autor:
Yoko Sakurai, Dietrich R. T. Zahn, Yoshinobu Hosoi, Kazuhiko Seki, Günther Leising, Yukio Ouchi, Norbert Koch, Thorsten U. Kampen, Hisao Ishii, Georgeta Salvan
Publikováno v:
Surface Science. 589:19-31
Well-ordered thin films of p-oligophenylenes, p-quaterphenyl (4P), p-quinquephenyl (5P) and p-sexiphenyl (6P), were prepared on a Cu(1 0 0) single crystal substrate by vacuum vapor deposition. Their structures were investigated by infrared reflection
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :425-428
The valence band discontinuity and the interface formation of the n-type hexagonal GaN/SiC(0 0 0 1) heterointerface have been studied by means of angle-resolved photoelectron spectroscopy using synchrotron radiation. Gallium nitride thin films were g