Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Thorsten Passow"'
Autor:
Thorsten Passow, Quankui Yang
Publikováno v:
Optics letters. 45(17)
A general eigen equation has been deduced that can handle ideal and non-ideal quarter-wavelength cases of Bragg-reflection waveguide structure for nonlinear interaction with matching layers on each side of the active region. In particular, this equat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1377221855f4fb39785af16d9d259760
https://pubmed.ncbi.nlm.nih.gov/32870846
https://pubmed.ncbi.nlm.nih.gov/32870846
Publikováno v:
Optik & Photonik. 13:43-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccbd906675d973c1a1ddb9d20a71825
https://doi.org/10.1002/opph.201800020
https://doi.org/10.1002/opph.201800020
Autor:
Frank Rutz, Robert Rehm, Lars Watschke, Thorsten Passow, Lutz Kirste, Stefano Leone, Oliver Ambacher, Rachid Driad, Frank Fuchs
AlxGa1−xN-based avalanche photodiodes with a Schottky-contact grown on AlN bulk substrate with an Al-content of x = 0.68 have been examined with respect to their structural and electro-optical properties. The Schottky diodes suitable for the solar-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c39d1ba5f1e79fe4fa6aeacfdcd63f2e
https://publica.fraunhofer.de/handle/publica/258677
https://publica.fraunhofer.de/handle/publica/258677
Publikováno v:
Applied Physics A. 124
Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc6fc7614bd163830cb2d373d9a05ea
https://doi.org/10.1007/s00339-018-1681-7
https://doi.org/10.1007/s00339-018-1681-7
Autor:
Klaus Köhler, Wilfried Pletschen, Joachim Wagner, Michael Kunzer, Paul Börner, Thorsten Passow
Publikováno v:
physica status solidi c. 11:817-820
Resonant-cavity light-emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/ZrO2 DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd793b553b28ec95092635454bbf7f3
https://doi.org/10.1002/pssc.201300417
https://doi.org/10.1002/pssc.201300417
Autor:
Thorsten Passow, Frank Rutz, Andreas Zibold, Lutz Kirste, Rachid Driad, Lars Watschke, Robert Rehm, Stefano Leone
Publikováno v:
physica status solidi (a). 217:1900769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f417c14abe0819a419e7efed9db4a282
https://doi.org/10.1002/pssa.201900769
https://doi.org/10.1002/pssa.201900769
Autor:
Rüdiger Moser, Thorsten Passow, Ulrich T. Schwarz, Maik Wiemer, Joachim Wagner, Michael Kunzer, Christian Goßler, Mario Baum, Klaus Köhler
Publikováno v:
Microsystem Technologies. 19:655-659
Eutectic aluminum–germanium wafer bonding was used to fabricate (AlGaIn)N thin-film light-emitting diodes (LEDs). Wafer bonding was carried out on 2″ wafer level at a bond temperature of 470 °C using patterned Al bond pads on the GaN-on-sapphire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7381a9c6677296130d59314ad1e111f2
https://doi.org/10.1007/s00542-012-1709-4
https://doi.org/10.1007/s00542-012-1709-4
Autor:
Kamran Forghani, Ferdinand Scholz, Thorsten Passow, Klaus Köhler, Richard Gutt, Lutz Kirste, Joachim Wagner, Wilfried Pletschen, Michael Kunzer
Publikováno v:
physica status solidi c. 9:794-797
Improving the internal quantum efficiency is still a major challenge for realizing efficient III-nitride-based light-emitting diodes (LEDs) with emission wavelengths below 365 nm. Here, we report on the influence of a very low In amount of less than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba3af691ac1aaf86117604518d66334
https://doi.org/10.1002/pssc.201100388
https://doi.org/10.1002/pssc.201100388
Autor:
Thorsten Passow, Marcel Himmerlich, Georg Eichapfel, Chunyu Wang, Andreas Knübel, Anja Eisenhardt, Fouad Benkhelifa, Rolf Aidam, Stefan Krischok
Publikováno v:
physica status solidi c. 9:685-688
The valence band offset (VBO) at the interface between indium nitride (InN) and selected oxide materials (Al2O3, TiO2, In2O3 and HfO2) is determined using X-ray photoelectron spectroscopy (XPS). For exact VBO determination, InN samples with oxide cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7140102a96a37f32d8af8fd4095e0f10
https://doi.org/10.1002/pssc.201100378
https://doi.org/10.1002/pssc.201100378
Autor:
Benjamin Neuschl, Kamran Forghani, Ute Kaiser, Thorsten Passow, Frank Lipski, J. Hertkorn, O. Klein, Klaus Thonke, Martin Klein, Robert A. R. Leute, Stephan Schwaiger, Martin Feneberg, Richard Gutt, Ferdinand Scholz
Publikováno v:
Journal of Crystal Growth. 315:216-219
We have investigated the optimization of Al 0.2 Ga 0.8 N layers directly grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The quality of the AlGaN epilayers was improved by in situ nano-masking employing ultra-thin SiN x interlayers. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fcb1af1722f5e211d625816951c7513
https://doi.org/10.1016/j.jcrysgro.2010.08.044
https://doi.org/10.1016/j.jcrysgro.2010.08.044