Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Thorsten Oeder"'
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::209823bdf3908c875ea095495bca4436
https://doi.org/10.1109/wipda56483.2022.9955266
https://doi.org/10.1109/wipda56483.2022.9955266
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
IEEE Transactions on Electron Devices. 68:4322-4328
In this study, we investigate the threshold voltage ( ${V} _{{{ \text {th}}}}$ ) instability of p-gate GaN HEMTs induced by gate bias. Experimental results are acquired by a custom pulse setup for two commercially available devices with an ohmic gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882163b6db7dedee3f7ffea3a8420e63
https://doi.org/10.1109/ted.2021.3098254
https://doi.org/10.1109/ted.2021.3098254
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
In this study, we investigate the threshold voltage (V th ) instability of p-gate GaN HEMTs due to off-state gate stress by means of experimental results. For this purpose, two commercially available devices with an ohmic-gate and a Schottkygate are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d4eb2bf3748032b85c69d9a27c9bc8
https://doi.org/10.1109/wipdaasia49671.2020.9360288
https://doi.org/10.1109/wipdaasia49671.2020.9360288
Publikováno v:
Microelectronics Reliability. :321-326
A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b1a8a73ca89b57259deeae6d8b052c
https://doi.org/10.1016/j.microrel.2017.06.046
https://doi.org/10.1016/j.microrel.2017.06.046
Autor:
Thorsten Oeder, Martin Pfost
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A measurement methodology is introduced to identify the characteristics of carrier accumulation in p-gate GaN HEMTs. To analyse the influence of the gate- and drain-biasing independently, the DUT is operated in a half-bridge configuration. Thereby, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce75f56c86338713553e4b87b5d74534
https://doi.org/10.1109/ispsd.2019.8757570
https://doi.org/10.1109/ispsd.2019.8757570
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Short-circuit withstand capability is one of the key elements when it comes to the selection of semiconductor power devices in different mainstream power electronics applications (i.e industrial, e-mobility etc). Alongside the single pulse SC robustn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6d3d536e0a875ded385d69d82af874
https://doi.org/10.1109/ispsd.2019.8757692
https://doi.org/10.1109/ispsd.2019.8757692
Publikováno v:
IRPS
Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00973961f7e7152c6edd482ee8f27a19
https://doi.org/10.1109/irps.2018.8353593
https://doi.org/10.1109/irps.2018.8353593
Publikováno v:
IndraStra Global.
In this paper, the short-circuit robustness of a normally-off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of fai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a783818a40cc8e09c455d8c0ec2db05f
https://igi.indrastra.com/items/show/20735
https://igi.indrastra.com/items/show/20735