Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Thorsten Last"'
Autor:
Thorsten Last, Massimo Mongillo, Tsvetan Ivanov, Adriaan Rol, Adam Lawrence, Garrelt Alberts, Danny Wan, Anton Potocnik, Kristiaan De Greve
Publikováno v:
Novel Patterning Technologies 2023.
Autor:
Garrelt J. N. Alberts, M. Adriaan Rol, Thorsten Last, Benno W. Broer, Cornelis C. Bultink, Matthijs S. C. Rijlaarsdam, Amber E. Van Hauwermeiren
Publikováno v:
EPJ Quantum Technology. 8
Product developmentGiven the recent breakthroughs in quantum technology development in R& D labs all over the world, the perspective of high-tech companies has changed.Productdevelopment is initiated next to the existingresearchandtechnologydevelopme
Autor:
Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VIII
With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized
Autor:
Gerardo Bottiglieri, Thorsten Last, Alberto Colina, Eelco van Setten, Gijsbert Rispens, Jan van Schoot, Koen van Ingen Schenau
Publikováno v:
32nd European Mask and Lithography Conference.
This paper presents some of the main imaging properties introduced with the design of a possible new EUV High-NA (NA > 0.5) exposure system with anamorphic projection lens, a concept not new in optics but applied for the first time in semiconductor l
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:043508
We shed light on the optimization of lithographic metrics for the semi-isolated dark field two-bar logic building block. Under standard D90Y illumination, this building block suffers from large mask three-dimensional-induced relative focus-dependent
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:021408
We will summarize our work on mask topography-induced effects over the last 5 years. We will give a full physical explanation of the effects that can be observed from exposed wafers in state-of-the-art immersion and extreme ultraviolet photolithograp
Publikováno v:
2007 29th Annual International Conference of the IEEE Engineering in Medicine and Biology Society.
The present study discusses two different training techniques for electrocardiogram (ECG) beat detection algorithms. The first technique is a patient specific training method which uses data from the patient's ECG signal to train the beat detector. T
Publikováno v:
BioMedical Engineering
BioMedical Engineering OnLine, Vol 3, Iss 1, p 26 (2004)
BioMedical Engineering OnLine, Vol 3, Iss 1, p 26 (2004)
Background The first stage in computerised processing of the electrocardiogram is beat detection. This involves identifying all cardiac cycles and locating the position of the beginning and end of each of the identifiable waveform components. The acc
Autor:
Jo Finders, Sander Wuister, Thorsten Last, Gijsbert Rispens, Eleni Psari, Jan Lubkoll, Eelco van Setten, Friso Wittebrood
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII
0.33 NA EUV lithography is expected to be introduced into High Volume Manufacturing at k1 values of approximately 0.4...0.5. This is significantly larger than state of the art immersion lithography which can operate at k1 of 0.3. We investigated the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a47852bed4de9833af59f65ab29aa2d