Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Thorsten Kammler"'
Autor:
Tristan Meunier, Mikael Casse, Fred Gaillard, Silvano De Franceschi, Maud Vinet, Thorsten Kammler, Christoforos G. Theodorou, L. Pirro, Gerard Ghibaudo, Bruna Cardoso Paz
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
International audience; This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::708b694d06bf0840770eb2e9e8c5635d
https://doi.org/10.1109/ted.2020.3021999
https://doi.org/10.1109/ted.2020.3021999
Autor:
Thorsten Kammler
Publikováno v:
ECS Transactions. 85:39-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29825fe36c4707605ea4278b35a6f4c1
https://doi.org/10.1149/08508.0039ecst
https://doi.org/10.1149/08508.0039ecst
Autor:
Christoph Schwan, Andreas Huschka, Edward J. Nowak, Laegu Kang, Rick Carter, David L. Harame, Mckay Thomas G, R. Taylor, Thomas Feudel, Kok Wai Johnny Chew, Jon Kluth, Josef S. Watts, Thorsten Kammler, Juergen Faul
Publikováno v:
ECS Transactions. 75:21-27
We report RF Characteristics in a Low Power High Performance Ultra-thin Body and Box (UTBB) FDSOI technology. The technology features Si-Channel nFETs and SiGe-Channel pFETS, a gate first HiKMG stack with a gate length (LG) of 20nm, BOX thickness (TB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fc661d06a387fa0dd44e0df2a208435
https://doi.org/10.1149/07508.0021ecst
https://doi.org/10.1149/07508.0021ecst
Autor:
Joanna Wasyluk, Andreas Dietel, Yew Tuck Chow, Joerg Schoenekess, Carsten Reichel, Thorsten Kammler
Publikováno v:
Solid-State Electronics. 110:14-18
Batch epitaxy has been introduced for high volume manufacturing of SiGe channels in order to reduce the cost for this epitaxial process by a factor of 3. Beside cost, SiGe channel deposition by batch epitaxy offers many benefits for manufacturing. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddf098882c4700938f57f79a3d2fddfe
https://doi.org/10.1016/j.sse.2015.01.018
https://doi.org/10.1016/j.sse.2015.01.018
Autor:
Thorsten Kammler, Francis Benistant, M. H. J. Goh, Alban Zaka, L. Jiang, G. Kluth, J. Mazurier, I. Cortes, Jamie Schaeffer, Peter Javorka, Tom Herrmann, S. Deb Roy, Edmund R. Nowak, B. Rice, Jan Hoentschel, L. Pirro, David Harame, El Mehdi Bazizi
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The 22FDX platform offered by GLOBALFOUNDRIES consists of a family of differentiated products architected to enable applications across a variety of market segments such as RF & Analog, Ultra-low Power (ULP), and Ultra-low Leakage (ULL). In order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a20623fbc4c086aa1ae1f0e57a314894
https://doi.org/10.23919/sispad.2017.8085340
https://doi.org/10.23919/sispad.2017.8085340
Autor:
Kok Wai Johnny Chew, Lye Hock Chan, L. Pirro, El Mehdi Bazizi, R. Taylor, Yogadissen Andee, Josef S. Watts, Christoph Schwan, Edward J. Nowak, Thomas Feudel, Thorsten Kammler, Steffen Lehmann, S.N. Ong, Bryan Rice, Elke Erben, W.H. Chow, Elliot John Smith, J. Mazurier, David Harame, Kumaran Sundaram
Publikováno v:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
We report an experimental pFET with 420GHz f T , which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac41af315d66d5fd225904e1ddfe7ca
https://doi.org/10.1109/rfic.2017.7969023
https://doi.org/10.1109/rfic.2017.7969023
Autor:
I. Aydin, C. Weintraub, J. Schmidt, Elke Erben, Hans-Jürgen Thees, Jamie Schaeffer, J. Kluth, T. Heller, C. Metze, R. Mulfinger, S. Nielsen, Jan Hoentschel, Thomas Feudel, Jürgen Faul, Rick Carter, J. Bernard, Peter Javorka, L. Pirro, David Harame, G. Grasshoff, S. Morvan, B. Rice, Carsten Grass, J-U. Sachse, Elliot John Smith, Mahbub Rashed, C. Bao, R. Nelluri, L. M-Meskamp, J. Mazurier, Yogadissen Andee, Thorsten Kammler, E. Bourjot, A. Preusse, Heimanu Niebojewski, Maud Vinet, P-Y. Chou, Peter Baars, R. Taylor
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM)
22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::694b50f52b286e0ad5957b2cb925a715
https://zenodo.org/record/1272091
https://zenodo.org/record/1272091
Autor:
Gunda Beernink, Thorsten Kammler, Carsten Reichel, Andreas Dietel, Joerg Schoenekess, Stephan Kronholz, Annekathrin Zeun
Publikováno v:
Thin Solid Films. 520:3170-3174
GLOBALFOUNDRIES 32 nm high-k metal gate technology, with SiGe channel for V T control of P-field effect transistor, is taken into production. This epitaxial channel material is being introduced into high volume manufacturing in complementary metal ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c7d3e6db38fb9d6b13005c133374574
https://doi.org/10.1016/j.tsf.2011.10.093
https://doi.org/10.1016/j.tsf.2011.10.093
Publikováno v:
Solid-State Electronics. 60:134-138
In high- K metal gate-first integration for future CMOS technologies an epitaxial SiGe layer in the P -channel is applied to modulate V T . This results in an unwanted elevation of the P -channel challenging particularly gate patterning. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d412ac33e697c34c2458598cc012a9e
https://doi.org/10.1016/j.sse.2011.01.018
https://doi.org/10.1016/j.sse.2011.01.018
Autor:
Thorsten Kammler
Publikováno v:
ECS Meeting Abstracts. :1478-1478
At the end of the traditional scaling of CMOS technologies, the industry started to explore paths to push for more performance in chips. This was and has always been driven by the performance-hungry high-end CPU and GPU manufacturers. The main approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e7d8fff0596fced074d177c04d45a19
https://doi.org/10.1149/ma2018-01/24/1478
https://doi.org/10.1149/ma2018-01/24/1478