Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Thorkild Franck"'
Autor:
Thorkild Franck, Ansheng Liu, Ulrich D. Keil, Dean A. Samara-Rubio, Ling Liao, Mario J. Paniccia, Dexter Hodge, Doron Rubin
Publikováno v:
Japanese Journal of Applied Physics. 45:6603-6608
Silicon photonics has recently attracted a great deal of attention because it offers an opportunity for low cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnect. One area of silicon photoni
Autor:
Thorkild Franck, Ansheng Liu, Ulrich D. Keil, Ling Liao, Dexter Hodge, Doron Rubin, Dean A. Samara-Rubio, Rami Cohen
Publikováno v:
Journal of Lightwave Technology. 23:4305-4314
The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and
Autor:
Rami Cohen, Doron Rubin, Ling Liao, Haisheng Rong, Mario J. Paniccia, Ulrich D. Keil, Richard Jones, Dani Hak, Oded Cohen, Dean A. Samara-Rubio, Thorkild Franck, Ansheng Liu
Publikováno v:
SPIE Proceedings.
Due to the mature silicon fabrication technology and vast existing infrastructures, silicon photonics has a chance to offer low cost solutions to telecommunications and data communications. It could also enable a chip-scale platform for monolithic in
Publikováno v:
11th International Conference on Integrated Optics and Optical Fibre Communications. 23rd European Conference on Optical Communications IOOC-ECOC97.
A simple duobinary transmitter requiring only two-level electrical drive signals applied to one MZ modulator is demonstrated. Experiments with PRBS word lengths of 2 7 -1 and 2 31 -1 show negligible penalties for transmission over 113.4 km of fiber.
Autor:
Ling Liao, Thorkild Franck, Ansheng Liu, Mike Morse, Ulrich D. Keil, Dexter Hodge, Dean A. Samara-Rubio, Doron Rubin
Publikováno v:
Optics Express. 13:3129
We demonstrate a silicon modulator with an intrinsic bandwidth of 10 GHz and data transmission from 6 Gbps to 10 Gbps. Such unprecedented bandwidth performance in silicon is achieved through improvements in material quality, device design, and driver
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Conference
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