Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Thoralf Gebel"'
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1378-1381
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f491f277250a9eb9f8b0d7f4e0dac5d
https://doi.org/10.1002/sdtp.10131
https://doi.org/10.1002/sdtp.10131
Autor:
Slawomir Prucnal, I.N. Osiyuk, V. S. Lysenko, R.A. Yankov, Wolfgang Skorupa, I. P. Tyagulskii, Alexei Nazarov, Jiaming Sun, Lars Rebohle, Thoralf Gebel
Publikováno v:
Applied Physics B 87(2007), 129-134
Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence (EL) quenching in Ge-implanted ITO-SiO2-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e518f9601558e7df3d93fa56ef722418
https://doi.org/10.1007/s00340-006-2534-1
https://doi.org/10.1007/s00340-006-2534-1
Autor:
Wolfgang Skorupa, A.S. Tkachenko, Thoralf Gebel, I. N. Osiyuk, V. S. Lysenko, Lars Rebohle, Alexey Nazarov, I. P. Tyagulskii, Ja. Vovk, R.A. Yankov
Publikováno v:
Materials Science and Engineering B 124(2005), 458
We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide–silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97fe789f3513369759fde85eca96ebc
https://doi.org/10.1016/j.mseb.2005.08.045
https://doi.org/10.1016/j.mseb.2005.08.045
Autor:
Daniel F. Downey, Edwin A. Arevalo, Wolfgang Skorupa, Rossen Yankov, Matthias Voelskow, Thoralf Gebel, Wolfgang Anwand
Publikováno v:
Materials Science and Engineering: B. :358-361
The capabilities of plasma doping (PLAD) and flash lamp annealing (FLA) for use in ultra-shallow junction (USJ) fabrication have been evaluated. Silicon wafers have been doped in a BF 3 plasma using wafer biases ranging from 0.6 to 1 kV and a dose of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eeaf288583f3c7bc32e6bb688c0c18e
https://doi.org/10.1016/j.mseb.2004.07.063
https://doi.org/10.1016/j.mseb.2004.07.063
Publikováno v:
Journal Applied Physics 94 (7): 4440-4448 OCT 1 2003
Negative and positive charge trapping under constant current regime of high-field electron injection both from Al electrode and Si substrate in high-dose Ge+ ion implanted and then rapid thermal annealed thin-film dioxide has been studied. The negati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87a19cd15bd45b4ba79167a4279d73a1
https://doi.org/10.1063/1.1604934
https://doi.org/10.1063/1.1604934
Publikováno v:
Microelectronics Reliability. 42:1461-1464
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c913286fd2b93b07ac85a60522e91f
https://doi.org/10.1016/s0026-2714(02)00170-1
https://doi.org/10.1016/s0026-2714(02)00170-1
Publikováno v:
Solid-State Electronics. 46:661-664
The electrical conduction mechanism of Ge-implanted SiO 2 films exhibiting room-temperature blue electroluminescence with a power efficiency of up to 5×10 −4 [Appl. Phys. Lett. 71 (1997) 2809] is investigated. In detail it will be shown that the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2476612f40573697751e93d60d3564c9
https://doi.org/10.1016/s0038-1101(01)00322-7
https://doi.org/10.1016/s0038-1101(01)00322-7
Publikováno v:
Microelectronic Engineering. 59:247-252
Electrical properties of 20–30 nm gate oxides implanted with Si + ions are investigated using MOS capacitors and transistors. The observed programming window can reach several volts and the devices exhibit good retention behavior. A first 256 k –
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9be019ebcf9d04c246025e1d6201fc6
https://doi.org/10.1016/s0167-9317(01)00634-7
https://doi.org/10.1016/s0167-9317(01)00634-7
Publikováno v:
Materials Science Forum. :587-590
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25bd61534f1e68db5b2c69843cb3315d
https://doi.org/10.4028/www.scientific.net/msf.353-356.587
https://doi.org/10.4028/www.scientific.net/msf.353-356.587
Publikováno v:
Mat. Sci. Forum 338-342 (2000) 741
ICSRCM Conference on SiC and related materials, Raleigh (NC) USA, 10.-15.10.1999
ICSRCM Conference on SiC and related materials, Raleigh (NC) USA, 10.-15.10.1999
Since the end of the 1960's spreading resistance (SR) measurements have become a routinely used technique for determining charge carrier profiles in silicon. For wide band gap semiconductors however the application of this method is difficult because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22e8e2b8a0ab34278ef715b39bf8ed98
https://doi.org/10.4028/www.scientific.net/msf.338-342.741
https://doi.org/10.4028/www.scientific.net/msf.338-342.741