Zobrazeno 1 - 10
of 386
pro vyhledávání: '"Thompson, Carl V."'
Publikováno v:
In Acta Materialia 1 January 2025 282
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and modeling results indicate th
Externí odkaz:
http://hdl.handle.net/1721.1/29818
Autor:
Chang, Choon Wai, Choi, Z.-S., Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value as low as 1250 A/cm, an
Externí odkaz:
http://hdl.handle.net/1721.1/7533
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocom
Externí odkaz:
http://hdl.handle.net/1721.1/7372
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN fi
Externí odkaz:
http://hdl.handle.net/1721.1/7362
Autor:
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are contr
Externí odkaz:
http://hdl.handle.net/1721.1/7360
Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates with anodized alumina mask pre
Externí odkaz:
http://hdl.handle.net/1721.1/7359
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been studied using atomic force micr
Externí odkaz:
http://hdl.handle.net/1721.1/3841
Autor:
Choi, Z.-S., Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., Maiz, J., Pey, Kin Leong, Choi, Wee Kiong
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal 2, M2, or via-below structures)
Externí odkaz:
http://hdl.handle.net/1721.1/3826
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in the second metal layer (M2) a
Externí odkaz:
http://hdl.handle.net/1721.1/3835