Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Thomas Zettler"'
Autor:
Gordon Schmidt, Jürgen Christen, Andreas Lesnik, Peter Veit, André Strittmatter, Armin Dadgar, Christoph Berger, Jürgen Bläsing, Thomas Zettler
Publikováno v:
Journal of Crystal Growth. 440:6-12
We report on metalorganic vapor phase epitaxy (MOVPE) of distributed Bragg reflectors (DBR) applying a periodic modulation of the GaN doping concentration only. The doping modulation changes the refractive index of GaN via the Burstein-Moss-effect. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1c6f0941135b1e62a96b0a899d7254
https://doi.org/10.1016/j.jcrysgro.2016.01.027
https://doi.org/10.1016/j.jcrysgro.2016.01.027
Autor:
Wolfgang Granig, Thomas Zettler, Mario Motz, Michael Strasser, Friedrich Rasbornig, Alessandro Michelutti, Dirk Hammerschmidt
Publikováno v:
SAE Technical Paper Series
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2ff15babf613258e2f78ee6d487ad8b
Autor:
J.-Thomas Zettler, Martin Zorn
Publikováno v:
physica status solidi (b). 242:2587-2594
The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices is reviewed. The RA signal detects small deviation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::509dd780081d060afb02f3ad4ba55876
https://doi.org/10.1002/pssb.200541090
https://doi.org/10.1002/pssb.200541090
Publikováno v:
physica status solidi (b). 242:2570-2574
We present an in situ method for the simultaneous determination of wafer curvature and true growth temperature during metalorganic vapor phase epitaxy of group-III-nitrides on silicon. The measurement configuration allows determining the wafer curvat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58aef1706c966d1cef32d0d4e00540e1
https://doi.org/10.1002/pssb.200541088
https://doi.org/10.1002/pssb.200541088
Publikováno v:
Materials Science Forum. :1051-1056
Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69648d0dc88073ce5684e89b6da872f4
https://doi.org/10.4028/www.scientific.net/msf.483-485.1051
https://doi.org/10.4028/www.scientific.net/msf.483-485.1051
Autor:
F. Schulze, Gunther Dr.rer.nat. Straßburger, A. Diez, R. Clos, Armin Dadgar, Jürgen Bläsing, Alois Krost, K. Haberland, Thomas Zettler
Publikováno v:
Journal of Crystal Growth. 272:72-75
In heteroepitaxy stress, either intrinsic or thermal, is a commonly observed phenomena. We have investigated in detail stress during metal organic chemical vapor-phase epitaxy of GaN on sapphire and silicon in situ by a curvature measurement techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db67b807f51074a07fd66d1c3506d678
https://doi.org/10.1016/j.jcrysgro.2004.08.031
https://doi.org/10.1016/j.jcrysgro.2004.08.031
Autor:
Thomas Zettler
Publikováno v:
Sensors and Actuators A: Physical. 44:159-163
A novel process concept for fabrication of gears and electrostatic micromotors is proposed which requires only three mask layers and can be employed in a conventional integrated circuit (IC) manufacturing process as a backend option. The process requ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640acd7d97f83f93a7566e3f0838dbe5
https://doi.org/10.1016/0924-4247(94)00799-3
https://doi.org/10.1016/0924-4247(94)00799-3
Publikováno v:
Heterostructure Epitaxy and Devices ISBN: 9789401065931
Heterostructure Epitaxy and Devices
Heterostructure Epitaxy and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7dc619b51b81d9468521127aff85c6c
https://doi.org/10.1007/978-94-009-0245-9_2
https://doi.org/10.1007/978-94-009-0245-9_2
Autor:
Daniel A. Fischer, Jörg–Thomas Zettler, Michael Klein, Frank Schienle, Elisabeth Steimetz, Wolfgang Richter
Publikováno v:
Japanese Journal of Applied Physics. 37:1483
The influence of different As-precursors [TMAs (trimethylarsine), TBAs (tertiarybutylarsine) and AsH3 (arsine)] on the formation of InAs-quantum-dots and their evolution was studied by applying reflectance anisotropy spectroscopy (RAS) and spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0ad563253df65543b701ab17991eeca
https://doi.org/10.1143/jjap.37.1483
https://doi.org/10.1143/jjap.37.1483
Publikováno v:
Applied Optics. 31:90
The relationship between infrared refractive index and near-infrared, visible, and ultraviolet absorption spectra is examined. The long-wavelength limit and dispersion are determined as simple functions of composition. The computed results are compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f67ecadaef1a82ab3ce2d0de28ed897d
https://doi.org/10.1364/ao.31.000090
https://doi.org/10.1364/ao.31.000090