Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Thomas Yurovchak"'
Autor:
Michael Shur, J. Diaz, John D. Blevins, Carlton T. Creamer, Craig McGray, Kenneth K. Chu, Ray Kallaher, Glen D. Via, Pane-Chane Chao, Thomas Yurovchak
Publikováno v:
IEEE Transactions on Electron Devices. 62:3658-3664
We report recent progress on GaN-on-diamond high electron mobility transistors (HEMTs) fabricated using a low-temperature device-transfer process. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::710313ab042123cb6092c94540c97785
https://doi.org/10.1109/ted.2015.2480756
https://doi.org/10.1109/ted.2015.2480756
Autor:
Bernard J. Schmanski, Scott Sweetland, J. Diaz, John D. Blevins, Thomas Yurovchak, Pane C. Chao, Craig McGray, Carlton T. Creamer, Raymond L. Kallaher, Kenneth K. Chu, Glen D. Via
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e33ad9f57381a4f3a7766de25af2723
https://doi.org/10.1109/csics.2015.7314511
https://doi.org/10.1109/csics.2015.7314511
Autor:
Kanin Chu, Amir Shooshtari, Carlton T. Creamer, Thomas Yurovchak, Serguei Dessiatoun, Michael M. Ohadi, Keith Lang, Adonis Kassinos, Geoffrey O. Campbell, Henry M. Eppich
Publikováno v:
Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays.
Under the DARPA-sponsored ICECool Applications program, a microchannel cooling system using a 50-50 ethylene glycol-water mixture was optimized for cooling a high-power GaN-on-Diamond Monolithic Microwave Integrated Circuit (MMIC). Automated multi-ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9fc3ef1897e0e28d00f0c463b66fad
https://doi.org/10.1115/ipack2015-48429
https://doi.org/10.1115/ipack2015-48429
Autor:
Scott Sweetland, Patrick McCluskey, Bernard J. Schmanski, Geoff Campbell, Thomas Yurovchak, Kenneth K. Chu, Carlton T. Creamer, Michael M. Ohadi, P.C. Chao, Henry Eppich
Publikováno v:
2014 Lester Eastman Conference on High Performance Devices (LEC).
In this work, we report on an innovative approach which integrates GaN-on-Diamond microstrip MMICs with a state-of-the-art microchannel cooler and provides a significant thermal advantage for high power GaN applications. Specifically, we describe eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3235deea39f54d30fb71f3ff9718c69d
https://doi.org/10.1109/lec.2014.6951559
https://doi.org/10.1109/lec.2014.6951559
Autor:
Thomas Yurovchak, Pane C. Chao, J. Diaz, Scott Sweetland, Carlton T. Creamer, Craig McGray, Raymond L. Kallaher, Kenneth K. Chu
Publikováno v:
2014 Lester Eastman Conference on High Performance Devices (LEC).
We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca23fcb0f89e4005114ad171fb3a487b
https://doi.org/10.1109/lec.2014.6951558
https://doi.org/10.1109/lec.2014.6951558
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report on a novel fabrication process of GaN-on-Diamond high electron mobility transistors (HEMTs) and its resulting thermal performance enhancement over conventional GaN-on-SiC technology. In this process, GaN devices are first fabricated on thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8cc1e62984de0a8f4f27627f3bd93a
https://doi.org/10.1109/csics.2013.6659246
https://doi.org/10.1109/csics.2013.6659246
Publikováno v:
Holographic Materials IV.
Using holographic methods to fabricate antireflection coatings is attractive because arbitrarily small reflectivities may be achieved at a single wavelength with a simple photographic process. In this paper, we discuss the theoretical aspects of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f161a2c858faf730e67afb36c2b02643
https://doi.org/10.1117/12.304512
https://doi.org/10.1117/12.304512