Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Thomas W Ekstedt"'
Publikováno v:
Journal of Engineering Education. 111:185-213
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705ee3f68f998b0ee765e9aa5cdbd62c
https://doi.org/10.1002/jee.20436
https://doi.org/10.1002/jee.20436
Publikováno v:
Proceedings of the ASEE Annual Conference & Exposition. 2022, p1-13. 13p.
Publikováno v:
Applied Physics Letters. 33:422-423
Vertical single‐junction silicon photovoltaic cells show a steady increase in open‐circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm2 (∼1000 suns). Voltages as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::687f461952e92e0aeb06588996855d8a
https://doi.org/10.1063/1.90408
https://doi.org/10.1063/1.90408
Autor:
Koretsky, Milo D.1,2 (AUTHOR) milo.koretsky@tufts.edu, McColley, Campbell J.3 (AUTHOR) mccollec@oregonstate.edu, Gugel, James L.3 (AUTHOR) gugelj@oregonstate.edu, Ekstedt, Thomas W.3 (AUTHOR) Tom.Ekstedt@oregonstate.edu
Publikováno v:
Journal of Engineering Education. Jan2022, Vol. 111 Issue 1, p185-213. 29p.
Publikováno v:
IEEE Transactions on Electron Devices; 1984, Vol. 31 Issue 1, p17-21, 5p
Publikováno v:
Applied Physics Letters; Sep1978, Vol. 33 Issue 5, p422-423, 2p
Publikováno v:
IEEE Transactions on Electron Devices; 1984, Vol. 31 Issue 12, pc4-c4, 1p
Publikováno v:
IEEE Transactions on Electron Devices; 1984, Vol. 31 Issue 1, pc4-c4, 1p
Publikováno v:
IEEE Transactions on Electron Devices; 1979, Vol. 26 Issue 5, pc4-c4, 1p