Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Thomas Theeuwes"'
Autor:
Moo-Young Seo, Dong-Gyu Park, Baukje Wisse, Yvon Chai, Jong-Mun Jeong, Jin-Moo Byun, Stefan Geerte Kruijswijk, Wei Guo, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Sharon Hsu, Steven Welch, Rui Zhang, Alok Verma, Giacomo Miceli, Sang-Hoon Jung, Rahul Khandelwal, Taeddy Kim, Hyun-Sok Kim, Yi Song, Kyu-Tae Sun
Publikováno v:
SPIE Proceedings.
The high-NA angle-resolved scatterometer YieldStar 1250D, with a small 12x12μm2 inspection area, has been used to inspect CD variation After Develop (ADI) and After Partition/Final Etch (APEI/AFEI) on various layers and features of a HVM DRAM proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee6ab7b87a96f62e6e077e7d07301ae
https://doi.org/10.1117/12.2220782
https://doi.org/10.1117/12.2220782
Autor:
Jongsu Lee, Steven Welch, Byounghoon Lee, Giacomo Miceli, Rui Zhang, Jin-Moo Byun, Stefan Geerte Kruijswijk, Sangjun Han, Noh-Jung Kwak, Kyu-Tae Sun, Won-Kwang Ma, Thomas Theeuwes, Young-Sik Kim, Sharon Hsu, Hugo Augustinus Joseph Cramer, Baukje Wisse, Yvon Chai, Yi Song, Alok Verma, Wei Guo
Publikováno v:
SPIE Proceedings.
Spacer multi patterning process continues to be a key enabler of future design shrinks in DRAM and NAND process flows. Improving Critical Dimension Uniformity (CDU) for main features remains high priority for multi patterning technology and requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722c7c1779e899d45577382faa799c83
https://doi.org/10.1117/12.2219664
https://doi.org/10.1117/12.2219664
Autor:
Thomas Theeuwes, Michael Kubis, Daan Slotboom, Young-Wan Lim, Kyu-Tae Sun, Sungki Park, Emil Schmitt-Weaver, Jens Staecker, Honggoo Lee, Min-Suk Kim, Won-Taik Kwon, Sangjun Han, Kevin Ryan, Myoung-Soo Kim
Publikováno v:
SPIE Proceedings.
While semiconductor manufacturing moves toward the 7nm node for logic and 15nm node for memory, an increased emphasis has been placed on reducing the influence known contributors have toward the on product overlay budget. With a machine learning tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2141aac6a260fc40c54755c189ba52f
https://doi.org/10.1117/12.2085475
https://doi.org/10.1117/12.2085475
Autor:
Thomas Theeuwes, Martin Ebert, Timon Fliervoet, Danu Satriasaputra, Hugo Augustinus Joseph Cramer, Peter Vanoppen, Henry Megens
Publikováno v:
SPIE Proceedings.
Holistic lithography is needed to cope with decreasing process windows and is built on three pillars: Scanner Tuning, Computational Lithography and Metrology & Control. The relative importance of stability to the overall manufacturing process latitud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3b565a7f68d3e39d98f7cfdbb3fd0c
https://doi.org/10.1117/12.848200
https://doi.org/10.1117/12.848200
Autor:
Jo Finders, Ingrid Minnaert-Janssen, Rachel Ren, Paul Frank Luehrmann, Ryan Gibson, Craig Hickman, Frank Duray, Robert Kazinczi, Nicole Schoumans, Lior Shoval, Baukje Wisse, Yair Elblinger, Yaron Cohen, Liesbeth Reijnen, Michael Ben-Yishai, Merri L. Carlson, Dan Rost, Ilan Englard, Shmoolik Mangan, Thomas Theeuwes, Michael B. Garrett, Erik Byers
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09beb6c4e2e408b2fde8044c3d974ad8
https://doi.org/10.1117/12.815415
https://doi.org/10.1117/12.815415
Autor:
Hans Van Der Laan, Kenji Morisaki, Takayuki Uchiyama, Hans Bakker, Thomas Theeuwes, Toshihiro Oga, Kazuyuki Yoshimochi, Rudy Peeters, Takao Tamura
Publikováno v:
SPIE Proceedings.
Here we present both simulation and experimental results that show the effect of changes in laser light source bandwidth (E95) on CD Iso-Dense Bias. For the 55nm Technology Node Device, we have shown that E95 stability of less than 0.11pm is required
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2589054a8737d5fe867509a218be379d
https://doi.org/10.1117/12.711052
https://doi.org/10.1117/12.711052
Autor:
Chanha Park, Young-Hong Min, Kiho Yang, Jongkyun Hong, Jinwoong Kim, Alek C. Chen, Donggyu Yim, Frederic Gautier, Hyunjo Yang, Thomas Theeuwes
Publikováno v:
SPIE Proceedings.
In hyper NA system, specific illumination combined with polarization can be used as one of major RET techniques. Polarization at high NA dry system is also regarded as important technology to bring improvement of very low k1 process. The benefits of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a2939d7aa2c330f2174d7f844e3296
https://doi.org/10.1117/12.712366
https://doi.org/10.1117/12.712366
Autor:
Mircea Dusa, Hans Van Der Laan, Maurice Janssen, Koen van Ingen Schenau, Thomas Theeuwes, Jan van Schoot, Alek C. Chen
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
As the device integration and relating lithography process progressively increasing in complexity for each new technology node, there is a growing need for a more integrated approach to process control. There are several insitu metrology sensors in A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1867943e1ca21bd5595234a8ef30d156
https://doi.org/10.1109/issm.2006.4493106
https://doi.org/10.1109/issm.2006.4493106
Autor:
Frans Blok, Byeong-Ho Cho, Donggyu Yim, Oscar Noordman, Peter Vanoppen, Chanha Park, Jan van Schoot, Thomas Theeuwes, Young-Hong Min
Publikováno v:
SPIE Proceedings.
As resolution shrinks, also the demands for litho CD Uniformity are becoming tighter. In replicating the mask pattern into photoresist, a sequence of modules within the patterning cluster (coat, expose, develop, etch) is responsible for CD non-unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6417199821289d778fed225e8605a713
https://doi.org/10.1117/12.474579
https://doi.org/10.1117/12.474579
Autor:
Sang-Wook Kim, Donggyu Yim, Choi-Dong Kim, Byeong-Ho Cho, Jan van Schoot, Jae-Sung Choi, Ho-Young Heo, Chanha Park, Gyu-Han Yoon, Dong-Duk Lee, Jae-Hak Choi, Min-Seob Han, Young-dae Kim, Yong-Chul Shin, Seung-Hyuk Lee, Thomas Theeuwes, Jungchan Kim, Jongkyun Hong, Tae-Hwa Yu, Hyunjo Yang, Khil-Ohk Kang, Young-Hong Min
Publikováno v:
SPIE Proceedings.
One of the crucial factors to take mostly into account the development and production of 130 nm node in low k1 DRAM process is the lens aberration sensitivity control of optical lithographic tools. To meet the required specification these impact of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6fe078739706d1ebb2c7ac4e43f4cae
https://doi.org/10.1117/12.474633
https://doi.org/10.1117/12.474633