Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Thomas Struck"'
Autor:
Sabine Wilfling, Thomas Struck
Publikováno v:
Controlling. 27:415-420
Autor:
Ulf Reupke, Thomas Struck
Publikováno v:
Controlling. 26:574-579
Autor:
Florian Letzkus, Mathias Irmscher, B. Panzer, Reinhard Springer, Jörg Butschke, Hans Loschner, M. Mohaupt, S. Eder, R. Eberhardt, Thomas Struck, Christian Reuter, Josef Mathuni, Albrecht Ehrmann
Publikováno v:
Microelectronic Engineering. :213-218
The 4×Ion Projection Lithography (IPL), which is designed to reach sub 70-nm feature sizes is a promising technology for the Next Generation Lithography (NGL). An important feature of IPL is the ‘pattern lock’ system allowing on-line control of
Autor:
Hendrik Kirbach, Thomas Struck
Publikováno v:
Photomask Technology 2008.
Today reticle costs become one of the main contributors in the cost of manufacturing of advanced logic products. Especially for low volume projects as of product sampling as well as design and product verifications the saving of reticle costs becomes
Autor:
Stefan Doebereiner, Anthony Grimshaw, Thomas Schatz, Andrew C. Hourd, Gordon Hughes, Parkson W. Chen, Hans-Jürgen Brück, Paul J. M. van Adrichem, Shiuh-Bin Chen, Herman Boerland, Alexander Petrashenko, Gerd Scheuring, Thomas Struck, Sigrid Lehnigk, Frank Hillmann
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. This is extremely driven by the ever increasing complexity of masks and their tightening specification
Autor:
T Lammer, Albrecht Ehrmann, Reinhard Springer, Rainer Kaesmaier, A. Chalupka, Joerg Butschke, Ernst Haugeneder, Florian Letzkus, Frank-Michael Kamm, Hans Loeschner, Mathias Irmscher, Thomas Struck, Andreas Wolter
Publikováno v:
SPIE Proceedings.
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching
Autor:
Frank-Michael Kamm, Albrecht Ehrmann, Thomas Struck, Karl Kragler, Joerg Butschke, Florian Letzkus, Reinhard Springer, Ernst Haugeneder
Publikováno v:
SPIE Proceedings.
Publikováno v:
SPIE Proceedings.
As part of the European MEDEA project on Ion Projection Lithography (IPL) a Process Development Tool (PDT [1, 2]) has been designed and integrated. The ion-optics and the mask handling system are already assembled and integrated in the PDT. In order
Autor:
Joerg Butschke, Reinhard Springer, Hans Loeschner, Florian Letzkus, Ernst Haugeneder, Mathias Irmscher, Thomas Struck, Albrecht Ehrmann
Publikováno v:
SPIE Proceedings.
Ion Projection Lithography (IPL) requires stencil masks. These masks are manufactured in a SOI wafer flow process. This means that e-beam patterning and the pattern transfer in silicon is done on the bulk mask-wafer blank before the membrane is forme