Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Thomas Stockmeier"'
Autor:
Thomas Grasshoff, Thomas Stockmeier
Publikováno v:
2012 IEEE Energytech.
Different Power Electronic Solutions ranging from 500 kW up to 6 MW comprising power semiconductor devices, DC link capacitors, heatsink, and gate & sense electronics are discussed incorporating new device and packaging technologies, such as SKiiP an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453b154e50d709cac9a0870903cc0328
https://doi.org/10.1109/energytech.2012.6304649
https://doi.org/10.1109/energytech.2012.6304649
Autor:
K. Hofmann, J. Burgler, P. Roggwiller, E. Halder, Thomas Stockmeier, S. Muller, Wolfgang Fichtner, R. Vuilleumier, M. Westermann, J.-M. Moret, Friedhelm Dr. Bauer, H. Haddon
Publikováno v:
IEEE Transactions on Electron Devices. 38:1605-1611
2.5-kV thyristor devices have been fabricated with integrated MOS controlled n/sup +/-emitter shorts and a bipolar turn-on gate using a p-channel DMOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 mu m were implemente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dca730cee3aad52f3b249876887cbc8
https://doi.org/10.1109/16.85156
https://doi.org/10.1109/16.85156
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
We have fabricated high voltage ( 3.5 kV ) MCT and IGBT devices simultaneously on the same silicon wafer to compare their static and dynamic characteristics. A DMOS technology was adapted to allow for the realization of n-channel ( IGBT ) and p-chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90bc1c4e896579138c4412afc83bb9c
https://doi.org/10.1109/ispsd.1992.991231
https://doi.org/10.1109/ispsd.1992.991231
Publikováno v:
Scopus-Elsevier
An attempt was made to simplify the processing of MCT (MOS controlled thyristor) and IGBT (insulated-gate bipolar transistor) devices by combining the anneal of the p/sup +/-emitter with the gate oxidation process. A high-dose boron implantation prio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db1667b140e3e2bd7d1a21ee1cdc2dd3
https://doi.org/10.1109/ispsd.1993.297116
https://doi.org/10.1109/ispsd.1993.297116
Autor:
Stefan Müller, Friedhelm Dr. Bauer, Wolfgang Fichtner, H. Dettmer, U. Krumbein, H. Lendenmann, Thomas Stockmeier, K. Lilja
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b866a6b441485412449c792a9034598e
https://doi.org/10.1109/ispsd.1993.297107
https://doi.org/10.1109/ispsd.1993.297107
Publikováno v:
Scopus-Elsevier
After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c89ae4ca1a2892c1b90997ff2a4a6065
https://doi.org/10.1109/ispsd.1994.583723
https://doi.org/10.1109/ispsd.1994.583723
Publikováno v:
Scopus-Elsevier
We observed that gate oxides of MCT and IGBT devices exhibited lower breakdown field strengths when the devices were fabricated on float-zone (FZ) instead of Czochralski-grown (CZ) silicon starting material. This is because of the different precipita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::360ca62ee7dc0e8f00b4c8ded1f6d069
https://doi.org/10.1109/ispsd.1994.583725
https://doi.org/10.1109/ispsd.1994.583725
Autor:
H. Dettmer, H. Lendenmann, Thomas Stockmeier, B.J. Baliga, Wolfgang Fichtner, Friedhelm Dr. Bauer
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The dynamic characteristics of large MCT (MOS controlled thyristor) ensembles have been improved by integrating IGBT (insulated-gated bipolar transistor) cells for turn-on and different schemes of cathode and anode shorting for turn-off. Such MCT-IGB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea0c4ec80bd721353d27a81b52edc63
https://doi.org/10.1109/iedm.1991.235479
https://doi.org/10.1109/iedm.1991.235479
Autor:
E. Herr, R. Bayerer, Thomas Stockmeier, H. Dettmer, Friedhelm Dr. Bauer, U. Thiemann, Wolfgang Fichtner
Publikováno v:
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
The impact of the injection efficiency of unshorted anode p/sup +/emitters on the static and dynamic electrical characteristics of high voltage non-punchthrough IGBTs is analysed using mixed mode two-dimensional device and circuit simulation tools. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944483d028d4d25284ae4ddcb5b11ddf
https://doi.org/10.1109/ispsd.1995.515040
https://doi.org/10.1109/ispsd.1995.515040
Publikováno v:
Scopus-Elsevier
Insulated Gate Bipolar Transistors (IGBTs) for snubberless operation at 4 kV line voltage in inductively loaded circuits have been developed, fabricated and characterized. The key point in the development of these high voltage devices is the Punch-Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb0df1c41a408c7983fbeafdc35b3658
https://doi.org/10.1109/ispsd.1995.515087
https://doi.org/10.1109/ispsd.1995.515087