Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Thomas Stelzner"'
Publikováno v:
Materials Science and Engineering: B. 177:1558-1562
Silicon nanorod solar cells were simulated using the Silvaco Technical Computer Aided Design (TCAD) software suite. For reasons of speed optimization the simulations were performed in cylinder coordinates taking advantage of the model's symmetry. Sym
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:1567-1579
Electric charge transport simulations of symmetrically doped radial pn junction silicon nanorod solar cells were performed using the Technology Computer-aided Design software suite by Silvaco. Two schemes of electric contacting were applied, the firs
Autor:
Silke Christiansen, Alexander Leshansky, Hossam Haick, Thomas Stelzner, Ossama Assad, Bin Wang
Publikováno v:
ACS Nano; Vol 6
Technological implementation of nanowires (NWs) requires these components to be organized with controlled orientation and density on various substrates. Here, we report on a simple and efficient route for the deposition of highly ordered and highly a
Autor:
Ossama Assad, Hossam Haick, Rawi Dirawi, Silke Christiansen, Bin Wang, Nisreen Shehada, Thomas Stelzner
Publikováno v:
ACS Applied Materials & Interfaces; Vol 4
Aligned arrays of silicon nanowires (aa-Si NWs) allow the exploitation of Si NWs in a scalable way. Previous studies explored the influence of the Si NWs' number, doping density, and diameter on the related electrical performance. Nevertheless, the o
Publikováno v:
Langmuir. 27:4764-4771
Here, we report on a simple, catalyst-free route for obtaining highly versatile subsequent functionalization on Si nanowires and Si(111) substrates. The versatility of this approach allows subsequent functionalization not only for organic species but
Publikováno v:
The Journal of Physical Chemistry C. 113:14823-14828
For many applications, the presence of oxide on Si nanowires (Si NWs) is undesirable because of the difficulty in controlling the SiO2/Si interface properties. Here, we report on the functionalization of 50 nm (in diameter) Si NWs with alkyl chains u
Publikováno v:
ACS Nano; Vol 6
Silicon nanowire field-effect transistors (Si NW FETs) have been used as powerful sensors for chemical and biological species. The detection of polar species has been attributed to variations in the electric field at the conduction channel due to mol
Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors
Publikováno v:
ACS nano. 5(7)
Silicon nanowire field effect transistors (Si NW FETs) are emerging as powerful sensors for direct detection of biological and chemical species. However, the low sensitivity of the Si NW FET sensors toward nonpolar volatile organic compounds (VOCs) i
Autor:
Mikko Ritala, Michael Becker, Viljami Pore, Vladimir Sivakov, Katja Höflich, Thomas Stelzner, Kai-Erik Elers, Andreas Berger, Silke Christiansen
Publikováno v:
ChemPhysChem.
A new method to prepare plasmonically active noble metal nanostructures on large surface area silicon nanowires (SiNWs) mediated by atomic layer deposition (ALD) technology has successfully been demonstrated for applications of surface-enhanced Raman
Publikováno v:
Lab on a chip. 10(3)
Silicon nanowire arrays were patterned onto silicon chips by a combination of lithography and chemical vapor deposition using the vapor-liquid-solid growth method. Thus, highly reproducible sample deposition zones were obtained that were used for las