Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Thomas Signamarcheix"'
Autor:
Sebastien Sollier, Julie Widiez, Gweltaz Gaudin, Frederic Mazen, Thierry Baron, Mickail Martin, Marie-Christine Roure, Pascal Besson, Christophe Morales, Elodie Beche, Frank Fournel, Sylvie Favier, Amelie Salaun, Patrice Gergaud, Maryline Cordeau, Christellle Veytizou, Ludovic Ecarnot, Daniel Delprat, Ionut Radu, Thomas Signamarcheix
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low tempera
Externí odkaz:
https://doaj.org/article/ffe38044688c423db103fb20f61af151
Autor:
Hughes Metras, Daniel Gitlin, Maud Vinet, Thomas Signamarcheix, Olivier Faynot, Jean-Rene Lequepeys, Severine Cheramy
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Electronic systems require the integration of tightly coupled components manufactured with very dissimilar manufacturing technologies. Meeting the system requirements of performance, cost and power is a challenging task and new integration methodolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0eeed36d40830e9246eb53a9ab975e
https://doi.org/10.1109/s3s.2017.8309222
https://doi.org/10.1109/s3s.2017.8309222
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Autor:
Rainer Krause, Ulrich Fiedeler, T.N.D. Tibbits, A. Wekkeli, Thierry Salvetat, Michael Schachtner, Frank Dimroth, Paul Beutel, M. Piccin, Andreas W. Bett, Nicolas Blanc, Thomas Signamarcheix, Klaus Schwarzburg, Aurélie Tauzin, Eric Guiot, E. Oliva, Christian Karcher, Thomas Hannappel, Matthias Grave, Gerald Siefer, Anja Dobrich, Charlotte Drazek, Bruno Ghyselen
Publikováno v:
Progress in Photovoltaics: Research and Applications. 22:277-282
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d46b7d65b6ce24069531277b9c6f0f06
https://doi.org/10.1002/pip.2475
https://doi.org/10.1002/pip.2475
Autor:
Thomas Signamarcheix, Thomas Lacave, Gweltaz Gaudin, Mariam Sadaka, Lea Di Cioccio, Ionut Radu, Floriane Baudin
Publikováno v:
ECS Transactions. 58:17-28
3D integration aims at providing highly integrated systems by vertically stacking and connecting various materials, technologies, and functional components together. We will review the different approaches, using direct bonding, developed to address
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6e19d48f98ea0ac13bddc4d4e49bd0
https://doi.org/10.1149/05809.0017ecst
https://doi.org/10.1149/05809.0017ecst
Autor:
Mariolle Denis, Stephane Thieffry, Nicolas Chevalier, Ionut Radu, Bruno Imbert, Frederic Mazen, Thomas Signamarcheix, Floriane Baudin, Lea Di Cioccio, Angelique Mounier, Vincent Delaye, Gweltaz Gaudin, Thomas Lacave
Publikováno v:
ECS Transactions. 50:169-175
While significant research effort on various planar approaches, the 3D vertical IC stacking is undoubtedly gaining increasing momentum as a leading contender in the challenge to meet performance, cost, and size demands through this decade and beyond.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c77f355addb5fb55ffe7a7d8430f732
https://doi.org/10.1149/05007.0169ecst
https://doi.org/10.1149/05007.0169ecst
Autor:
Thierry Baron, Pascal Besson, Mickail Martin, Christophe Morales, Sebastien Sollier, Maryline Cordeau, Ionut Radu, Amelie Salaun, Thomas Signamarcheix, Ludovic Ecarnot, Marie-Christine Roure, Elodie Beche, Daniel Delprat, Christellle Veytizou, Gweltaz Gaudin, Sylvie Favier, Frank Fournel, Frédéric Mazen, Julie Widiez, Patrice Gergaud
Publikováno v:
Journal of Low Power Electronics and Applications; Volume 6; Issue 4; Pages: 19
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f2d50e306cf5c094c92c62ff9d8ecf1
Autor:
L. Pasini, Perrine Batude, V. Benevent, Maud Vinet, Thomas Signamarcheix, R. Kachtouli, Sébastien Barnola, A. Royer, C. Vizioz, F. Fournel, J.M. Hartmann, G. Romano, N. Allouti, Sebastien Kerdiles, Christophe Morales, A. Seignard, C. Agraffeil, Frederic Boeuf, F. Ponthenier, Vincent Delaye, F. Deprat, M. Jourdan, L. Benaissa, L. Baud, C. Euvrard-Colnat, O. Faynot, Bernard Previtali, C. Guedj, P. Besombes, C. Comboroure, Claire Fenouillet-Beranger, L. Hortemel, Laurent Brunet, Claude Tabone, Nicolas Posseme, Alain Toffoli, C.-M. V. Lu, Christian Arvet, Pascal Besson
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or rais
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ed124b81563782c46dfeb93f1c6bd0
https://doi.org/10.1109/vlsit.2016.7573428
https://doi.org/10.1109/vlsit.2016.7573428
Autor:
V. Klinger, E. Oliva, Thierry Salvetat, Jean-Sébastien Moulet, Paul-Henri Haumesser, Christophe Lecouvey, Frank Dimroth, Romain Thibon, Thierry Mourier, Aurélie Tauzin, Thomas Signamarcheix, Paul Beutel, Guillaume Rodriguez, Jean-Marc Fabbri, Bruno Imbert, Frank Fournel, Abdelhak Hassaine, Christophe Jany
Publikováno v:
AIP Conference Proceedings.
The Solar cell front side is a key design point for improved cell efficiency as a trade is made between optical losses (shadowing effect) and electrical losses (resistance). One solution consists in frontside contacts report to the cell’s backside
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1534ddfcce1a1e0e76e9224439228e6
https://doi.org/10.1063/1.4962094
https://doi.org/10.1063/1.4962094
Autor:
Gerald Siefer, Aurélie Tauzin, Andreas Bett, M. Niemeyer, Christian Karcher, Felix Predan, Frank Dimroth, T.N.D. Tibbits, Peter Fus-Kailuweit, E. Oliva, Thomas Signamarcheix, Rainer Krause, Paul Beutel, Jocelyne Wasselin, David Lackner, Eric Guiot, Charlotte Drazek
Publikováno v:
IEEE Journal of Photovoltaics
The highest solar cell conversion efficiencies are achieved with four-junction devices under concentrated sunlight illumination. Different cell architectures are under development, all targeting an ideal bandgap combination close to 1.9, 1.4, 1.0, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e81dfc94eaf548a8f79e5c2b4b108c1
Autor:
Olivier Faynot, Thomas Signamarcheix, Young-Ho Bae, A. Ohata, Laurent Clavelier, J. Widiez, Bruno Ghyselen, Sorin Cristoloveanu
Publikováno v:
Microelectronics Reliability. 52:2602-2608
Local Deep-Amorphization (DA) and subsequent Solid-Phase Epitaxial Regrowth (SPER) are envisioned for the co-integration of devices with hybrid surface orientation. The impact of these processes on the electrical characteristics of p-channel MOSFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9fa8eb2f2a6577ab4ccc777ac66f32
https://doi.org/10.1016/j.microrel.2012.05.014
https://doi.org/10.1016/j.microrel.2012.05.014