Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thomas Schutz-Kuchly"'
Autor:
Abdelilah Slaoui, Thomas Schutz-Kuchly
Publikováno v:
Applied Physics A. 112:863-867
The purpose of this work was to investigate the surface passivation of n-type float zone silicon substrates using a double layer composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (SiN:H). The layers were d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3facc0e10c2c007dd57e2ea0cece135f
https://doi.org/10.1007/s00339-013-7802-4
https://doi.org/10.1007/s00339-013-7802-4
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:1214-1221
This study focuses on the characterisation and the fabrication of solar cells using n-type multicrystalline silicon purified via the metallurgical route. Electrical and chemical analyses were performed on wafers taken from several positions along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98aa15228f67fc59e063b8bf288a55a4
https://doi.org/10.1002/pip.2182
https://doi.org/10.1002/pip.2182
Publikováno v:
Energy Procedia
Energy Procedia, 2011, 8, pp.35-40. ⟨10.1016/j.egypro.2011.06.098⟩
Energy Procedia, Elsevier, 2011, 8, pp.35-40. ⟨10.1016/j.egypro.2011.06.098⟩
Energy Procedia, 2011, 8, pp.35-40. ⟨10.1016/j.egypro.2011.06.098⟩
Energy Procedia, Elsevier, 2011, 8, pp.35-40. ⟨10.1016/j.egypro.2011.06.098⟩
This study focuses on the fabrication and the characterization of solar cells using highly doped boron-phosphorus compensated n-type multicrystalline silicon. Two ingots were used and compared for this study. One ingot was crystallized from a silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a646ffb920fc965cb8055385a6bdc30f
Autor:
Yannick Veschetti, Sébastien Dubois, Dick Heslinga, Thomas Schutz-Kuchly, Jordi Veirman, Olivier Palais
Publikováno v:
physica status solidi (a). 208:572-575
This study focuses on the evolution under illumination of the electrical performances of solar cells made with n-type boron-phosphorus compensated Czochralski silicon. First, we show via carrier lifetime measurements that this material is sensitive t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43adf0eabf83b52557aed499b2039c5
https://doi.org/10.1002/pssa.201000218
https://doi.org/10.1002/pssa.201000218
Autor:
Abdelilah Slaoui, Damien Aureau, Matthieu Pawlik, A. Etcheberry, Thomas Schutz-Kuchly, Raphaël Cabal, Mathieu Halbwax, Jean-Pierre Vilcot
Publikováno v:
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y-Advanced materials and characterization techniques for solar cells II
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y-Advanced materials and characterization techniques for solar cells II, 2014, Lille, France
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y-Advanced materials and characterization techniques for solar cells II, 2014, Lille, France
Passivation process is a key feature to improve the efficiency of silicon solar cells. So far, a 20nm-thick layer of Al2O3 grown by Plasma Enhanced Atomic Layer Deposition (PE-ALD) followed by a 450°C anneal during 15 to 30 min gives the best result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b321954f3689da61bbec392c93892eb3
https://hal.science/hal-00964247
https://hal.science/hal-00964247
Publikováno v:
Applied Physics Letters. 96:093505
This letter focuses on the evolution under illumination of the carrier lifetime in n-type boron–phosphorus compensated Czochralski silicon. Our results show a Light-Induced-Degradation (LID) of the carrier lifetime which we prove to be related to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53164baea852c9702ce3c9e9e039d254
https://doi.org/10.1063/1.3334724
https://doi.org/10.1063/1.3334724