Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Thomas Scherübl"'
Publikováno v:
ESSDERC
Advanced process control in lithography and overall patterning is of tremendous importance for advanced semiconductor Fabs to ensure chip performance and yield. The final patterning result and thus yield depend on many process parameters such as lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55aebf5ea8209d82638b9337b0636e42
https://doi.org/10.1109/essderc.2019.8901766
https://doi.org/10.1109/essderc.2019.8901766
Autor:
Hans-Michael Solowan, Dirk Beyer, Jin-Back Park, Hak-Seung Han, Thomas Scherübl, Steffen Steinert
Publikováno v:
SPIE Proceedings.
Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc05322dd9044957a2346f4f37231a5
https://doi.org/10.1117/12.2241498
https://doi.org/10.1117/12.2241498
Publikováno v:
aot. 1:289-298
Photomasks carry the structured information of the chip designs printed with lithography scanners onto wafers. These structures, for the most modern technologies, are enlarged by a factor of 4 with respect to the final circuit design, and 20–60 of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97f3a205f143a5d2d7e7349ce412f215
https://doi.org/10.1515/aot-2012-0124
https://doi.org/10.1515/aot-2012-0124
Publikováno v:
Österreichische Wasser- und Abfallwirtschaft. 60:113-122
Die Abfallwirtschaft spielt bei der Erreichung der CO2-Reduktionsziele in Osterreich eine wichtige Rolle, sie ist einer der wenigen Sektoren die eine positive Entwicklung darstellen konnen. Die Umsetzung der Deponie-VO hat zu wesentlichen strukturell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c2587ce54d905a62d53bc81685ab08
https://doi.org/10.1007/s00506-008-0006-z
https://doi.org/10.1007/s00506-008-0006-z
Publikováno v:
SPIE Proceedings.
The combination of a reflective photoma sk with the non-telecen tric illumination and arc shaped slit of the EUV scanner introduces what are known as shadowing effects. The compensation of these effects requires proper biasing of the photomask to gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f55ff7649943c613e67e2370e75ea6
https://doi.org/10.1117/12.2067578
https://doi.org/10.1117/12.2067578
Autor:
Jochen Hetzler, Dirk Beyer, Sven Heisig, Steffen Steinert, Dirk Seidel, Thomas Scherübl, Susanne Töpfer
Publikováno v:
SPIE Proceedings.
With the introduction of complex lithography schemes like double and multi – patterning and new design principles like gridded designs with cut masks the requirements for mask to mask overlay have increased dramatically. Still, there are some good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df5ea0610e974933ff117bcfac5e0fb
https://doi.org/10.1117/12.2069925
https://doi.org/10.1117/12.2069925
Publikováno v:
MÜLL und ABFALL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265ddf81ca7f22caf1221ae0f2c34112
https://doi.org/10.37307/j.1863-9763.2009.10.07
https://doi.org/10.37307/j.1863-9763.2009.10.07
Autor:
Onno Wismans, Jo Finders, Thomas Scherübl, Mircea Dusa, Kees Grim, Rigo Richter, Eelco van Setten, Robert Birkner
Publikováno v:
SPIE Proceedings.
Flash memory is an important driver of the lithography roadmap, with its dramatic acceleration in dimensional shrink, pushing for ever smaller feature sizes. The introduction of hyper-NA immersion lithography has brought the 45nm node and below withi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::736944226bdc4a997cad0a07dcc64a81
https://doi.org/10.1117/12.824279
https://doi.org/10.1117/12.824279
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
With decreasing feature size, the requirements for CD uniformity (CDU) on the wafer have become crucial for achieving the required yield in the wafer fab. This is related to tighter CDU specifications on the photomask. Currently, mask CDU is mainly m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::033afb6a631692a2e4fef85c0feea037
https://doi.org/10.1117/12.814728
https://doi.org/10.1117/12.814728
Publikováno v:
Photomask Technology 2008.
The AIMS™45-193i is the established tool for mask performance qualification and defect printing analysis in the mask shop under scanner conditions. Vector effects are taken into account by the proprietary Zeiss vector effect emulator. In several st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f324aa9f8cd1173f3d4138cd53b095ae
https://doi.org/10.1117/12.801226
https://doi.org/10.1117/12.801226