Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Thomas Roedle"'
Autor:
Thomas Roedle, Ammar Issaoun
Publikováno v:
World Journal of Applied Physics. 6:1
This article deals with the extension of the small-signal model usage to GaN technologies benchmarking, and to the detection of internal oscillations occurring in highly optimized multi-finger GaN high-electron-mobility transistors (HEMTs). The propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5bce073082a7b971efd0ee8ebae08bf
https://doi.org/10.11648/j.wjap.20210601.11
https://doi.org/10.11648/j.wjap.20210601.11
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:4048-4062
This paper introduces an improved nonintrusive near-field technique for in situ characterization of distributed effects in GaN high-power transistors. Compared with previous passive probing approaches which sense electric fields induced by drain bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a58e3e06311a81f183afe4b613997e
https://doi.org/10.1109/tmtt.2016.2613525
https://doi.org/10.1109/tmtt.2016.2613525
Autor:
Niklas Rorsman, Mattias Thorsell, Jorg Splettstoesser, Hans Hjelmgren, Sebastian Gustafsson, Hervé Blanck, Jim Thorpe, Olle Axelsson, Thomas Roedle
Publikováno v:
IEEE Transactions on Electron Devices. 63:326-332
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49428d02e7013af24ee6fc8589cd932d
https://doi.org/10.1109/ted.2015.2499313
https://doi.org/10.1109/ted.2015.2499313
Publikováno v:
2018 48th European Microwave Conference (EuMC).
Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce023ec42557f217dd2f35affa189cb
https://doi.org/10.23919/eumc.2018.8541576
https://doi.org/10.23919/eumc.2018.8541576
Autor:
M. Baeumler, Helmer Konstanzer, M. Wespel, Peter Brückner, Stephan Maroldt, Michael Mikulla, Thomas Roedle, Ruediger Quay, Michael Dammann, P.J. van der Wel, Andreas Graff, Martino Lorenzini, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Microelectronics Reliability. 55:1667-1671
The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 μm has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a292bc9915a396f34eac45316406fa6
https://doi.org/10.1016/j.microrel.2015.06.042
https://doi.org/10.1016/j.microrel.2015.06.042
Publikováno v:
Microelectronics Reliability. 53:1439-1443
This paper describes the qualification of the 50 V, 0.5 μm GaN on SiC process that has been released at the III–V fab of UMS in Ulm in cooperation with IAF and NXP Semiconductors. The qualification at NXP is split into two parts: Part 1: investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1136f3d57e662061ebc786048fce078
https://doi.org/10.1016/j.microrel.2013.08.022
https://doi.org/10.1016/j.microrel.2013.08.022
Autor:
Martino Lorenzini, Patrick Waltereit, Michael Mikulla, Thomas Roedle, Helmer Konstanzer, Stefan Müller, Roshna George, Michél Simon-Najasek, Oliver Ambacher, Frank Altmann, Paul J. van der Wel, Michael Dammann, Vladimir Polyakov, Rudiger Quay, Fouad Benkhelifa, M. Baeumler, Stephan Maroldt, M. Wespel, Joachim Wagner, Peter Brückner, Andreas Graff, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications.
Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a38084515961c9af906742de97fbec
https://doi.org/10.1117/12.2189521
https://doi.org/10.1117/12.2189521