Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Thomas Roedle"'
Autor:
Thomas Roedle, Ammar Issaoun
Publikováno v:
World Journal of Applied Physics. 6:1
This article deals with the extension of the small-signal model usage to GaN technologies benchmarking, and to the detection of internal oscillations occurring in highly optimized multi-finger GaN high-electron-mobility transistors (HEMTs). The propo
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:4048-4062
This paper introduces an improved nonintrusive near-field technique for in situ characterization of distributed effects in GaN high-power transistors. Compared with previous passive probing approaches which sense electric fields induced by drain bond
Autor:
Niklas Rorsman, Mattias Thorsell, Jorg Splettstoesser, Hans Hjelmgren, Sebastian Gustafsson, Hervé Blanck, Jim Thorpe, Olle Axelsson, Thomas Roedle
Publikováno v:
IEEE Transactions on Electron Devices. 63:326-332
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in
Publikováno v:
2018 48th European Microwave Conference (EuMC).
Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detectio
Autor:
M. Baeumler, Helmer Konstanzer, M. Wespel, Peter Brückner, Stephan Maroldt, Michael Mikulla, Thomas Roedle, Ruediger Quay, Michael Dammann, P.J. van der Wel, Andreas Graff, Martino Lorenzini, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Microelectronics Reliability. 55:1667-1671
The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 μm has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step
Publikováno v:
Microelectronics Reliability. 53:1439-1443
This paper describes the qualification of the 50 V, 0.5 μm GaN on SiC process that has been released at the III–V fab of UMS in Ulm in cooperation with IAF and NXP Semiconductors. The qualification at NXP is split into two parts: Part 1: investiga
Autor:
Martino Lorenzini, Patrick Waltereit, Michael Mikulla, Thomas Roedle, Helmer Konstanzer, Stefan Müller, Roshna George, Michél Simon-Najasek, Oliver Ambacher, Frank Altmann, Paul J. van der Wel, Michael Dammann, Vladimir Polyakov, Rudiger Quay, Fouad Benkhelifa, M. Baeumler, Stephan Maroldt, M. Wespel, Joachim Wagner, Peter Brückner, Andreas Graff, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications.
Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is
Autor:
Hou, Rui, Lorenzini, Martino, Spirito, Marco, Roedle, Thomas, van Rijs, Fred, de Vreede, Leo C. N.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; Nov2016 Part 2, Vol. 64 Issue 11b, p4048-4062, 15p
Autor:
Axelsson, Olle, Gustafsson, Sebastian, Hjelmgren, Hans, Rorsman, Niklas, Blanck, Herve, Splettstoesser, Jorg, Thorpe, Jim, Roedle, Thomas, Thorsell, Mattias
Publikováno v:
IEEE Transactions on Electron Devices; Jan2016, Vol. 63 Issue 1, p326-332, 7p
Publikováno v:
2015 European Microwave Conference (EuMC); 2015, p1-112, 112p