Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Thomas R. Fullowan"'
Autor:
R. People, P.F. Sciortino, S. N. G. Chu, Tawee Tanbun-Ek, Clyde G. Bethea, Won-Tien Tsang, P. Wisk, A.M. Sergent, Thomas R. Fullowan
Publikováno v:
IEEE Photonics Technology Letters. 9:563-565
The fabrication of the first 1.55-/spl mu/m wavelength tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser is reported. A low-threshold and stable single-mode operation is obtained when the devices we
Autor:
Won-Tien Tsang, T. V. Nguyen, J.E. Johnson, Y.K. Park, Thomas R. Fullowan, Jichai Jeong, O. Mizuhara, P.D. Yeates, L.D. Tzeng, R. D. Yadvish, Paul F. Sciortino, A. M. Sergent, Paul A. Morton
Publikováno v:
IEEE Photonics Technology Letters. 8:1255-1257
Transmission performance of a 10-Gb/s integrated electroabsorption modulator/DFB laser has been evaluated in terms of the eye margin degradation and the receiver sensitivity penalty caused by the chromatic dispersion in the standard (non-DSF) fiber.
Autor:
Roosevelt People, Thomas R. Fullowan, Tawee Tanbun-Ek, Paul F. Sciortino, Gerald Nykolak, Clyde G. Bethea, Laura Ellen Adams, Arthur Mike Sergent
Publikováno v:
SPIE Proceedings.
New enabling technologies are needed for optical communication systems to accommodate rapidly growing traffic demands. Wavelength conversion and high-speed optical packet switching/routing will be key technology components for realizing more flexible
Autor:
J.E. Johnson, Thomas R. Fullowan, J.M. Vandenberg, Tawee Tanbun-Ek, Paul F. Sciortino, L.J.P. Ketelsen, Yong-Kwan Park, Arthur Mike Sergent, Thomas John Miller, Paul A. Morton, R. D. Yadvish, J.A. Grenko, S.K. Sputz, Won-Tien Tsang
Publikováno v:
SPIE Proceedings.
The explosive growth in internet, multimedia and wireless traffic in recent years is rapidly exhausting capacity in public networks worldwide, forcing network service providers to aggressively install new lines and upgrade old ones. Fortunately, tech
Autor:
Thomas R. Fullowan, Mark D. Feuer, P.R. Smith, R. W. Ryan, Stephen C. Shunk, Roger J. Malik, Leda Lunardi
Publikováno v:
SPIE Proceedings.
Ultra thin (100-200 A) AlGaAs emitter layers have been incorporated in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs). Fabricated using a self-aligned process technology, this novel structure has yielded transistors with submicron emitter widt
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