Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Thomas N. Theis"'
Autor:
Chanaka Keerthisinghe, Ana Rita Silva, Paulino Tardaguila, Gabor Horvath, Aijun Deng, Thomas N. Theis
Publikováno v:
IEEE Access, Vol 11, Pp 128697-128705 (2023)
This paper shows that the short-term wind power forecasts of a target farm can be significantly improved by using ramp predictions and information from nearby farms. To do this, we first obtain benchmark wind power forecasts from Scipher.Fx by Utopus
Externí odkaz:
https://doaj.org/article/2f61f8cd205f478dbb37d5c675af102d
Autor:
Thomas N. Theis, H.-S. Philip Wong
Publikováno v:
Computing in Science & Engineering. 19:41-50
The insights contained in Gordon Moore's now famous 1965 and 1975 papers have broadly guided the development of semiconductor electronics for over 50 years. However, the field-effect transistor is approaching some physical limits to further miniaturi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21401bbed5ab862c3bea688c5579c9c
https://doi.org/10.1109/mcse.2017.29
https://doi.org/10.1109/mcse.2017.29
Autor:
Thomas N. Theis
Publikováno v:
ECS Transactions. 45:3-11
In a recent survey of the exploratory device literature (1), Theis and Solomon studied proposed low-voltage digital devices, and identified the underlying operating principles which enable those devices to overcome the voltage-scaling limit of the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a746b4c567d1ce519a9f52fdac865850
https://doi.org/10.1149/1.3700933
https://doi.org/10.1149/1.3700933
Autor:
Paul M. Solomon, Thomas N. Theis
Publikováno v:
Proceedings of the IEEE. 98:2005-2014
Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous building block for complex digital logic. We outline the poss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0b40a5b28e69e8057947dd569c781d
https://doi.org/10.1109/jproc.2010.2066531
https://doi.org/10.1109/jproc.2010.2066531
Autor:
Ryan Keech, Alejandro G. Schrott, Thomas N. Theis, Timothy M. Shaw, X.-H. Liu, Brian A. Bryce, Marcelo A. Kuroda, Hiroyuki Miyazoe, Susan Trolier-McKinstry, L. W. Hung, Bruce G. Elmegreen, Stephen M. Rossnagel, M. S. Gordon, G. J. Martyna, Smitha Shetty, Wilfried Haensch, Kathleen B. Reuter, Matthew Copel, Paul M. Solomon, Christine Armstrong, Dennis M. Newns
The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14714f2ef5dedef4bb9f3d1d14d2f6f3
Autor:
Thomas N. Theis, Paul M. Horn
Publikováno v:
Physics Today. 56:44-49
Why do information technology companies support exploratory research in physics and allied fields? The answer is simple—because of the need to bring new technology quickly to market. Ultimately, even long-term research is all about speed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406ad6704275ddcc53d8a9c344aaf884
https://doi.org/10.1063/1.1603079
https://doi.org/10.1063/1.1603079
Autor:
Thomas N. Theis
Publikováno v:
Computing in Science & Engineering. 5:25-29
Will progress in the miniaturization of silicon transistors soon come to an end? Silicon pessimists and the proponents of revolutionary new devices and circuit architectures have been consistently wrong for decades. The author explores past, present,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b35dd6e108cf265a8251c0e76e2fee1
https://doi.org/10.1109/mcise.2003.1166549
https://doi.org/10.1109/mcise.2003.1166549
Autor:
Thomas N. Theis
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
Leading semiconductor companies are increasing their research investment in new devices and circuit architectures with the potential to take information technology beyond the inherent limits of the field effect transistor (FET). Some of the devices e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f71f1608a811258331a483d703ea6f9
https://doi.org/10.1109/snw.2014.7348525
https://doi.org/10.1109/snw.2014.7348525
Autor:
Paul M. Solomon, David J. Frank, Thomas N. Theis, Vijay Narayanan, Martin M. Frank, Catherine Dubourdieu
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61, pp.2145. ⟨10.1109/TED.2014.2314652⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61, pp.2145. ⟨10.1109/TED.2014.2314652⟩
International audience; It has recently been suggested that ferroelectric (FE) negative capacitance effects can be used to achieve steep subthreshold slope field-effect transistors, which are greatly desired for reducing energy consumption in modern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9eef5ab28c6acfa8e971c4bb7b8e100
https://hal.archives-ouvertes.fr/hal-01489910
https://hal.archives-ouvertes.fr/hal-01489910
Autor:
Thomas N. Theis
Publikováno v:
IBM Journal of Research and Development. 44:379-390
Continuing advances in interconnection technology are seen as essential to continued improvements in integrated circuit performance. The recent introduction of copper metallization, dual-damascene processing, and fully articulated hierarchical wiring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cdf6ef9cfdfd354355a50a9cc2cd31
https://doi.org/10.1147/rd.443.0379
https://doi.org/10.1147/rd.443.0379