Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Thomas Melde"'
Autor:
Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dunkel, Martin Trentzsch, Sven Beyer, Stefan Slesazeck, Thomas Mikolajick
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 748-756 (2020)
Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the context of nonvolatile memory applications but also for being an auspicious candidate for novel
Externí odkaz:
https://doaj.org/article/649587937bf34c2a8df0201a7564680f
Autor:
Dayane Reis, Kai Ni, Wriddhi Chakraborty, Xunzhao Yin, Martin Trentzsch, Stefan Dunkel, Thomas Melde, Johannes Muller, Sven Beyer, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 103-112 (2019)
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resisti
Externí odkaz:
https://doaj.org/article/15257d087fc54e44befb07a1490b820a
Autor:
Nicki Mika, Thomas Melde, Stefan Dunkel, Michael Otto, Francois Weisbuch, Peter Krottenthaler, Thomas Mikolajick
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d5dbfbb8d506612c19a4523080fd81
https://doi.org/10.1109/essderc55479.2022.9947160
https://doi.org/10.1109/essderc55479.2022.9947160
Autor:
Johannes Müller, Thomas Melde, Kai Ni, Suman Datta, Stefan Dunkel, Michael Niemier, Xunzhao Yin, Xiaobo Sharon Hu, Wriddhi Chakraborty, Sven Beyer, Dayane Reis, Martin Trentzsch
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 103-112 (2019)
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spin-transfer torque magnetic random access memory (STT-RAM), resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::149ef287144636c6be82da8b5b34d5b8
https://ieeexplore.ieee.org/document/8768343/
https://ieeexplore.ieee.org/document/8768343/
Autor:
Ralf Richter, Thomas Melde, Stefan Duenkel, H. Giesler, N. Weddeler, Sven Beyer, M. Trentzsch, M. Otto, F. Weisbuch
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Besides the high interest and effort spend for emerging memories, the market is still demanding embedded floating gate flash as non-volatile memory solution. Single Poly floating gate fabrication in SOI technology offers new scaling opportunities by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ae2514b5570f787d3591913558983f
https://doi.org/10.1109/imw51353.2021.9439612
https://doi.org/10.1109/imw51353.2021.9439612
Autor:
Xinwang Liu, Tom Herrmann, G. Festes, B. Bertello, Yuri Tkachev, Boris Bayha, M. Duggan, Ralf Richter, Alban Zaka, Decobert Catherine, Thomas Melde, S. Wittek, Stefan Dunkel, N. Do, P. Ghazav, N. Bollon, F. Mauersberger, Sven Beyer, Kim Jinho, Viktor Markov, B. Muller, Zhou Feng, S. Jourba, M. Trentzsch
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
This paper presents the characterization and reliability results achieved on 1.8 V 4 Mb flash array built around 3rd generation Embedded SuperFlash® (ESF3) memory cell featuring high-k metal gate (HKMG) select transistor and embedded into Low-Power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d6b99bb8692b55d9511f87f7674fd4
https://doi.org/10.1109/imw48823.2020.9108118
https://doi.org/10.1109/imw48823.2020.9108118
Autor:
Sven Beyer, Thomas Melde, S. Wittek, L. Perniola, S. Duenkel, C. Cagli, M. Trentzsch, F. Gaillard, B. Mueller
Publikováno v:
IRPS
Novel HfO 2 -based non-volatile ferroelectric field effect transistors (FeFETs) are revolutionizing the field of ferroelectric memories and have the potential to be a solution for eNVM in advanced scaled nodes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef8dc8e7d157e02c01119ad77f5c94f
https://doi.org/10.1109/irps.2019.8720449
https://doi.org/10.1109/irps.2019.8720449
Autor:
Stefan Dunkel, Thomas Mikolajick, Halid Mulaosmanovic, Martin Trentzsch, Jens Trommer, Stefan Slesazeck, Evelyn T. Breyer, Sven Beyer, Thomas Melde
Publikováno v:
ESSDERC
Ferroelectric field-effect transistors (FeFET) based on hafnium oxide offer great opportunities for Logic-in-Memory applications, due to their natural ability to combine logic (transistor) and memory (ferroelectric material), their low-power operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::609455ee6d0898d838710e70e1660e4b
https://tud.qucosa.de/id/qucosa:79724
https://tud.qucosa.de/id/qucosa:79724
Autor:
Steve Knebel, Ekaterina Yurchuk, Thomas Mikolajick, Thomas Melde, Jonas Sundqvist, Uwe Schröder, Johannes Müller, Andrew P. Graham
Publikováno v:
Thin Solid Films. 533:88-92
The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator–metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 °C and silicon contents from 0 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6c83f7c01202789c440cde6044e034
https://doi.org/10.1016/j.tsf.2012.11.125
https://doi.org/10.1016/j.tsf.2012.11.125