Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Thomas M. Shaw"'
Publikováno v:
Extreme Mechanics Letters. 13:100-107
The mechanical properties of two porous ultra-low-k (ULK) dielectric thin films (porous carbon-doped silicon dioxide (pSiCOH); and octamethylcyclotetrasiloxane (OMCTS)) were measured by nanoindentation. Since a direct contact of a nanoindentation tip
Autor:
Minhua Lu, Boshen Fu, Thomas M. Shaw, Griselda Bonilla, Hongbing Lu, Yingjie Du, Xiao Hu Liu, Thomas A. Wassick
Publikováno v:
Mechanics of Time-Dependent Materials. 21:287-305
Current nanoindentation techniques for the measurement of creep properties are applicable to viscoplastic materials with negligible elastic deformations. A new technique for characterization of creep behavior is needed for situations where the elasti
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, an automated contactless defect analysis technique using Computer Vision (CV) algorithms is presented. The proposed method includes closed-loop control of optical tools for automated image collection, as well as advanced image analysis
Publikováno v:
Microelectronic Engineering. 147:100-103
Display Omitted Water incursion into low-k BEOL capacitors was monitored via impedance spectroscopy.It is a non-destructive, zero DC field, low AC field probe (
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
Crackstops are vital parts of the back-end-of-line (BEOL) chip stack in electronic packages and are often responsible for preventing catastrophic mechanical and electrical breakdown within a semiconductor device. The present work is focused on evalua
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
Recently the mechanical properties of nano-porous ultra-low-k (ULK) dielectric thin films have been characterized by nanoindentation using a tri-layer sample configuration. Tetraethyl orthosilicate (TEOS) silica was coated on the fragile ULK thin fil
Autor:
Vamsi Paruchuri, Juntao Li, Takeshi Nogami, Daniel C. Edelstein, Terry A. Spooner, Stephan A. Cohen, Theodorus E. Standaert, Moosung M. Chae, James J. Kelly, Terence Kane, Donald F. Canaperi, Elbert E. Huang, Benjamin D. Briggs, Raghuveer R. Patlolla, Deepika Priyadarshini, Sevim Korkmaz, Paul S. McLaughlin, Christopher Parks, Christopher J. Penny, Anita Madan, Xunyuan Zhang, Hosadurga Shobha, Wei Wang, Son Nguyen, Thomas M. Shaw
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn O barrier, with integrity proven b
Autor:
Thomas M. Shaw, Keith Fowler Beckham, J. Malinowski, Xiao Hu Liu, Keishi Okamoto, Toyohiro Aoki, Shinichi Harada, Brian Wayne Herbst, Takashi Hisada
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 4:17-23
The mechanical integrity of wirebonds are sensitive to structures under the bond pads of ultra low-k dielectric devices. The authors studied the mechanical performance of wirebonds on 32-nm test chips with various layouts of lines and vias under the
Autor:
Griselda Bonilla, Chenming Hu, Thomas J. Haigh, C. Zahakos, Steven E. Molis, Thomas M. Shaw, Steve Cohen, Eric G. Liniger, Chet Dziobkowski, N. Klymko, Hosadurga Shobha, Alfred Grill, Son V. Nguyen
Publikováno v:
ECS Transactions. 33:137-145
The scaling limit of plasma enhanced chemical vapor deposited (PECVD) ultrathin(5-35 nm) silicon carbon nitride (SiCNH) dielectric as an oxidation and Cu diffusion barrier for damascene process is explored. The SiCNH cap's electrical properties, oxid
Autor:
Devika Sil, Alfred Grill, Thomas M. Shaw, Han You, Matthew T. Shoudy, Eric G. Liniger, Mark Raymond, Donald F. Canaperi, Anita Madan, Donald Dorman, Petra Mennell, Tsong-Lin Leo, Stephan A. Cohen
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:012202
A novel extreme low-k (ELK) porous SiCOH (pSiCOH) dielectric has been developed by adding a third carbosilane precursor to the diethoxymethylsilane and bicycloheptadiene precursors used in the plasma enhanced chemical vapor deposition fabrication pro