Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Thomas Laidig"'
Autor:
Wei Wu, Kevin Lucas, Pat Cook, Stephen Hsu, Doug Van Den Broeke, Chris Progler, Robert John Socha, Will Conley, Stefan van de Goor, Erika Schaefer, Arjan Verhappen, Kurt E. Wampler, Bernie Roman, Thomas Laidig, Bryan S. Kasprowicz, Jan Pieter Kuijten, Lloyd C. Litt
Publikováno v:
Microelectronic Engineering. :393-397
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::397e1b59e672fdb603829ab0f688bd3c
https://doi.org/10.1016/j.mee.2004.12.051
https://doi.org/10.1016/j.mee.2004.12.051
Publikováno v:
Optical Microlithography XXI.
While lithography R&D community at large has already gotten the mind set for 32nm, all eyes are on 22nm node. Current consensus is to employ computational lithography to meet wafer CD uniformity (CDU) requirement. Resolution enhancement technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cebea013854566e3defd05f6c47e3474
https://doi.org/10.1117/12.773060
https://doi.org/10.1117/12.773060
Publikováno v:
SPIE Proceedings.
The RET Design Flow has become a conglomeration of various point tools and methodologies. Deep sub-wavelength DFM requirements have forced the design and manufacturing communities into very tight collaboration. EDA is also driven to provide an infras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d61edb530997c934bdcc91b92981e49
https://doi.org/10.1117/12.681812
https://doi.org/10.1117/12.681812
Autor:
Uwe Hollerbach, Douglas Van Den Broeke, Thomas Laidig, J. Fung Chen, Stephen Hsu, Michael Hsu
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, patterning contact and via mask layers continue to be major challenge. As a result, RET's beyond the current standard 6% attPSM technology are being pursued with a goal of reducing the k 1 for hole patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77a3b98288782808d52d8a070a4256a
https://doi.org/10.1117/12.681811
https://doi.org/10.1117/12.681811
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Thomas Laidig, Uwe Hollerbach, Jungchul Park, Ting Chen, Xuelong Shi, Keith Gronlund, Robert John Socha, Sangbong Park, Douglas Van Den Broeke, Michael C. W. Hsu, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today’s advanced lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcca599b59275212b712b9717dd3e1d1
https://doi.org/10.1117/12.617430
https://doi.org/10.1117/12.617430
Autor:
Michael Hsu, Xuelong Shi, Jang Fung Cupertino Chen, Stephen Hsu, Robert John Socha, Thomas Laidig, Doug Van Den Broeke, Kurt E. Wampler, Uwe Hollerbach
Publikováno v:
SPIE Proceedings.
Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k 1 lithography manufacturing. The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0f871a9cde0b6d2811848332241824
https://doi.org/10.1117/12.617165
https://doi.org/10.1117/12.617165
Autor:
Stephen Hsu, Thomas Laidig, Doug Van Den Broeke, Wei Wu, Bryan S. Kasprowicz, Bernie Roman, Arjan Verhappen, Kurt E. Wampler, Jan Pieter Kuijten, Lloyd C. Litt, Robert John Socha, Stephan van de Goor, Kevin Lucas, Will Conley, Chris Progler
Publikováno v:
Optical Microlithography XVIII.
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0289a887ad5f448bec36ddc52dc0d50b
https://doi.org/10.1117/12.605481
https://doi.org/10.1117/12.605481
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Xuelong Shi, Uwe Hollerbach, Robert John Socha, Doug Van Den Broeke, Thomas Laidig, Kurt E. Wampler, Michael Hsu
Publikováno v:
Optical Microlithography XVIII.
Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k 1 lithography manufacturing. [1] The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10471237c6d6a4aa77dd980338517e3f
https://doi.org/10.1117/12.598589
https://doi.org/10.1117/12.598589
Autor:
Thomas Laidig, Robert John Socha, Uwe Hollerbach, Jungchul Park, Noel Corcoran, Kurt E. Wampler, Xuelong Shi, Douglas Van Den Broeke, Stephen Hsu, Mircea Dusa, J. Fung Chen
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, imaging contact and via layers continues to be a major challenge for 65nm node lithography and beyond. As a result, much effort is being placed on reducing the k 1 for hole patterning to the range of 0.35 - 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a9315cb2716ae42acb15ec434ec6f2
https://doi.org/10.1117/12.568692
https://doi.org/10.1117/12.568692
Autor:
J. Fung Chen, Douglas Van Den Broeke, Michael Hsu, Kurt E. Wampler, Xuelong Shi, Thomas Laidig, Stephen Hsu
Publikováno v:
SPIE Proceedings.
Low k1 lithography process enables the production of 90nm and 65nm nodes by introducing advanced resolution enhancement technology (RET) mask with complex layout. To ensure the printed wafer outcome that meets the original IC design specifications, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5445efbe1c8c4debad68963d67da44dc
https://doi.org/10.1117/12.568670
https://doi.org/10.1117/12.568670