Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Thomas Lacave"'
Autor:
Vincent Beix, Marion Volpert, Adrien Gasse, Thomas Lacave, Abdenacer Ait-Mani, Brigitte Soulier, Pamela Rueda, Patrick Peray, Frederic Mercier, David Henry Francois Levy, Bertrand Chambion, Aurelie Vandeneynde
Publikováno v:
2018 7th Electronic System-Integration Technology Conference (ESTC).
TSV first or TSV last are technologies used in 3D packaging, that are now well described in the literature. However there is still room for some improvement especially in the field of TSV isolation. Certain applications such as power applications or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::850ec6f37cb66ef6e7b24338acce7b2a
https://doi.org/10.1109/estc.2018.8546496
https://doi.org/10.1109/estc.2018.8546496
Autor:
Aurelie Vandeneynde, Vincent Beix, Frederic Mercier, Abdenacer Ait Mani, Bertrand Chambion, Pamela Rueda, Marion Volpert, Adrien Gasse, Thomas Lacave, Boris Bouillard, David Henry, Brigitte Soulier
Publikováno v:
2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition.
For the need of energy saving, LEDs are taking more and more space in lighting modules. Moreover, LEDs add several applications to the lighting function, smartness, dimming, bio photonic applications, a lot of fields that none former light sources co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09dfe8ae6febcaffe63d29bc33a7a691
https://doi.org/10.23919/empc.2017.8346883
https://doi.org/10.23919/empc.2017.8346883
Autor:
Thomas Signamarcheix, Thomas Lacave, Gweltaz Gaudin, Mariam Sadaka, Lea Di Cioccio, Ionut Radu, Floriane Baudin
Publikováno v:
ECS Transactions. 58:17-28
3D integration aims at providing highly integrated systems by vertically stacking and connecting various materials, technologies, and functional components together. We will review the different approaches, using direct bonding, developed to address
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6e19d48f98ea0ac13bddc4d4e49bd0
https://doi.org/10.1149/05809.0017ecst
https://doi.org/10.1149/05809.0017ecst
Autor:
Mariolle Denis, Stephane Thieffry, Nicolas Chevalier, Ionut Radu, Bruno Imbert, Frederic Mazen, Thomas Signamarcheix, Floriane Baudin, Lea Di Cioccio, Angelique Mounier, Vincent Delaye, Gweltaz Gaudin, Thomas Lacave
Publikováno v:
ECS Transactions. 50:169-175
While significant research effort on various planar approaches, the 3D vertical IC stacking is undoubtedly gaining increasing momentum as a leading contender in the challenge to meet performance, cost, and size demands through this decade and beyond.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c77f355addb5fb55ffe7a7d8430f732
https://doi.org/10.1149/05007.0169ecst
https://doi.org/10.1149/05007.0169ecst
Autor:
Thomas Lacave, A. Pottrain, Pascal Chevalier, Christophe Gaquiere, I. Hasnaoui, Daniel Gloria
Publikováno v:
Electronics Letters
Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩
Electronics Letters, IET, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩
Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩
Electronics Letters, IET, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩
Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02ba095568cf8c0eeea6e40f88be7e76
https://hal.science/hal-01055077
https://hal.science/hal-01055077
Autor:
W. Van Den Daele, Sorin Cristoloveanu, Fabrice Letertre, Carlos Mazure, P. Scheiblin, Frederic Mazen, Iuliana Radu, Thomas Lacave, L. Di Cioccio, Thomas Signamarcheix, Gweltaz Gaudin
Publikováno v:
Proceedings of the 43rd European Solid-State Device Research Conference
43rd ESSDERC
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.151-154, ⟨10.1109/ESSDERC.2013.6818841⟩
ESSDERC
43rd ESSDERC
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.151-154, ⟨10.1109/ESSDERC.2013.6818841⟩
ESSDERC
Low temperature 3D wafer stacking for very high density device integration is achieved using the Smart Cut™ technology and solid phase re-crystallization. Thin silicon PN bi-layers of high quality are transferred onto new handle substrate without e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23dcbec43b5d9d8b0651d95573d4e7a0
https://hal.science/hal-01021831
https://hal.science/hal-01021831
Autor:
Pascal Chevalier, J. Rosa, Christophe Gaquiere, G. Avenier, E. Canderle, F. Pourchon, N. Derrier, Andreea Balteanu, Didier Celi, A. Pottrain, Y. Carminati, A. Montagne, Daniel Gloria, Sorin P. Voinigescu, Alain Chantre, E. Dacquay, I. Sarkas, Thomas Lacave
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36511f95107b8b975820f5af641c457b
https://doi.org/10.1109/csics.2012.6340083
https://doi.org/10.1109/csics.2012.6340083
Autor:
Thomas Lacave, Christophe Gaquiere, A. Pottrain, Damien Ducatteau, Daniel Gloria, Pascal Chevalier
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩
IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩
IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩
In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits FMAX above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f13222718dfcd98c6093511b10974b53
https://hal.archives-ouvertes.fr/hal-00788168
https://hal.archives-ouvertes.fr/hal-00788168
Autor:
Christophe Gaquiere, Pascal Chevalier, Frederic André, M. Buczko, L. Depoyan, Y. Campidelli, Alain Chantre, G. Avenier, L. Berthier, Thomas Lacave
Publikováno v:
ECS Transactions, 33
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices'
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices', 2010, United States. pp.331-335, ⟨10.1149/1.3487563⟩
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices'
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices', 2010, United States. pp.331-335, ⟨10.1149/1.3487563⟩
We present in this paper the influence of the integration of the Selectively Implanted Collector (SIC) on the performance of +400 GHz fMAX Si/SiGe:C HBTs featuring a selective epitaxy of the base [1]. The process uses a standard collector module (n+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a13e97a595d21ee533f8642daf6f437a
https://hal.archives-ouvertes.fr/hal-00550006
https://hal.archives-ouvertes.fr/hal-00550006
Autor:
Arnaud Suderie, Thomas Hantschel, Wilfried Vandervorst, Cindy Demeulemeester, Thomas Lacave, Thierry Conard
Publikováno v:
MRS Proceedings. 1184
X-ray photoelectron spectroscopy (XPS) has become increasingly important over the past few years for supporting the development of ultra-thin layers for high-k metal gates. As the analysis depth of XPS is however limited to about 5-7 nm, it would be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::611dec58598fe7a43f083498a8a091f4
https://doi.org/10.1557/proc-1184-hh08-04
https://doi.org/10.1557/proc-1184-hh08-04