Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Thomas Kauerauf"'
Publikováno v:
ACI Avances en Ciencias e Ingenierías, Vol 5, Iss 2 (2013)
This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm c
Externí odkaz:
https://doaj.org/article/66bddac510b04d27833912b5613c25a1
Autor:
Dewei Xu, Junyang Chen, Jimmy Koh, Emiko Motoyama, Meena Rajachidambaram, Jean Raymond Fakhoury, Radhika Kamlapurkar, Rachel Gantt, Daniel Palmieri, J. Nicholas Alexander, Bas Korevaar, Edward Gordon, Thomas Kauerauf, Teck Jung Tang, Robert Fox, Seung-Yeop Kook, Owen Hu
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Autor:
Hongseon Yang, Hye-Jin Kim, Toshiro Nakanishi, Thomas Kauerauf, Dong-Won Kim, Hyun-Woo Lee, Sangwoo Pae, Kab-Jin Nam, Guangfan Jiao, Sung-il Park, Eun-ae Chung, Ki Hyun Hwang
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
In this paper, a physical mechanism for hot carrier injection (HCI) induced trap generation and degradation in bulk FinFETs is investigated and verified with both experiment and simulation evidence. HCI degradation is mainly caused by interface state
Autor:
Maria Toledano-Luque, Jürgen Bömmels, Thomas Kauerauf, I. De Wolf, Yunlong Li, Baojun Tang, Yohan Barbarin, K. Croes, Robin Degraeve, Zsolt Tőkei, Y. Q. Wang
Publikováno v:
Microelectronics Reliability. 54:1675-1679
Highly porous low-k dielectrics are essential for downscaling of the interconnects for 20–10 nm technologies. A planar capacitor test vehicle was used to investigate the intrinsic time dependent dielectric breakdown (TDDB) reliability of low-k diel
Autor:
Pierre C. Fazan, Romain Ritzenthaler, Johan Albert, Vasile Paraschiv, Wilfried Vandervorst, E. Vecchio, Aftab Nazir, Efrain Altamirano-Sanchez, Geert Schoofs, Nadine Collaert, H.-J. Na, Sun-Ghil Lee, F. Sebai, Thomas Kauerauf, Naoto Horiguchi, Y. Son, Moon Ju Cho, Alexey Milenin, Alessio Spessot, Bastien Douhard, Marc Aoulaiche, K. B. Noh, Aaron Thean, Christian Caillat, Soon Aik Chew, Tom Schram
Publikováno v:
IEEE Transactions on Electron Devices. 61:2935-2943
In this paper, a low-cost and low-leakage gate-first high-k metal-gate CMOS integration compatible with the high thermal budget used in a 2× node dynamic random access memory process flow is reported. The metal inserted polysilicon stack is based on
Autor:
Thomas Kauerauf, Guillaume Boccardi, Hiroaki Arimura, Ben Kaczer, Jae Woo Lee, Anabela Veloso, Guido Groeseneken, Lars-Ake Ragnarsson, Moonju Cho, Naoto Horiguchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:408-412
Channel hot-carrier (CHC) reliability in p-FinFET devices is studied related to the postdeposition anneal (PDA) process. Clearly reduced CHC degradation is observed with N2-PDA at the VG = VD stress condition. The interface defect density degradation
Autor:
Eun-ae Chung, Geum-Jong Bae, Nakanishi Toshiro, Maria Toledano-Luque, Jin-soak Kim, Guangfan Jiao, Thomas Kauerauf, Ki-Hyun Hwang, Dong-Won Kim, Seung-Hun Lee, Kab-Jin Nam, Dong-il Bae
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged accep
Autor:
Thomas Kauerauf, Ben Kaczer, Philippe Roussel, Jacopo Franco, Naoto Horiguchi, Guido Groeseneken, Thomas Chiarella, Robin Degraeve, Moonju Cho, Marc Aoulaiche
Publikováno v:
IEEE Transactions on Electron Devices. 60:4002-4007
The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to V
Autor:
Tibor Grasser, Guido Groeseneken, Jerome Mitard, Geert Eneman, Jacopo Franco, B. Kaczer, Moonju Cho, Ph. J. Roussel, Maria Toledano-Luque, Liesbeth Witters, Thomas Kauerauf
Publikováno v:
Microelectronic Engineering. 109:250-256
(Si)Ge channel pMOS technology offers remarkably reduced Negative Bias Temperature Instability (NBTI) at ultra-thin EOT.We ascribe this property to a reduced interaction of channel holes with dielectric defects thanks to energy decoupling.The reduced
Autor:
Thomas Kauerauf, Robin Degraeve, Rosana Rodriguez, Esteve Amat, Xavier Aymerich, Guido Groeseneken, Montserrat Nafria
Publikováno v:
Microelectronic Engineering. 103:144-149
This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high I"D and dynamic operation co