Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Thomas Kaltsounis"'
Autor:
Mohammed El Amrani, Julien Buckley, Thomas Kaltsounis, David Plaza Arguello, Hala El Rammouz, Daniel Alquier, Matthew Charles
Publikováno v:
Crystals, Vol 14, Iss 6, p 553 (2024)
In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despi
Externí odkaz:
https://doaj.org/article/92ff3a7f558c48c1ada4c451dcb90ed2
Autor:
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Publikováno v:
Microelectronic Engineering. 273:111964
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac69f37f368818fdd2aad906e15d3e1
https://doi.org/10.1016/j.mee.2023.111964
https://doi.org/10.1016/j.mee.2023.111964