Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Thomas Hirtz"'
Autor:
Tian-Rui Cui, Ding Li, Thomas Hirtz, Wan-Cheng Shao, Zi-Bo Zhou, Shou-Rui Ji, Xin Li, Jian-Dong Xu, Jin-Ming Jian, Zhi-Kang Chen, Ze-Yi Tang, Zi-Gan Xu, Kai-Yin Liu, Hou-Fang Liu, Yi Yang, Tian-Ling Ren
Publikováno v:
Applied Sciences, Vol 13, Iss 8, p 4688 (2023)
With its excellent electrical and mechanical properties and the rapid development of its device fabrication technologies, laser-induced graphene (LIG) has played an important role in the field of wearable technologies since its discovery in 2014. In
Externí odkaz:
https://doaj.org/article/b296fffddd134baba08639f153abf9bc
Autor:
Yang Shen, He Tian, Yanming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xuefeng Wang, Tian-Ling Ren
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
The emerging memories are great candidates to establish neuromorphic computing challenging non-Von Neumann architecture. Emerging non-volatile resistive random-access memory (RRAM) attracted abundant attention recently for its low power consumption a
Externí odkaz:
https://doaj.org/article/e3f1d07c54234ef6adb7123150c28785
Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction
Autor:
Yang Shen, Jie Ren, Zhaoyi Yan, Yi Yang, Guang-Yang Gou, He Tian, Fan Wu, Thomas Hirtz, Tian-Ling Ren
Publikováno v:
ACS Applied Materials & Interfaces. 13:26161-26169
Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c73fb68709f50424582570dc33d8693
https://doi.org/10.1021/acsami.1c03959
https://doi.org/10.1021/acsami.1c03959
Autor:
Qixin Feng, Jiawang Hong, Xiangshun Geng, Xinran Zheng, Xichao Tan, Tian-Ling Ren, Mingyang Liu, Dan Xie, Hainan Zhang, Yi Yang, Rui Zhao, Min Chen, Yao Huang, Thomas Hirtz, Ziyan Gao, Ken Qin, Renrong Liang, Yuanyuan Zhou, He Tian, Nitin P. Padture, Guanhua Dun, Xue-Feng Wang, Xueyun Wang
Publikováno v:
IEEE Transactions on Electron Devices. 67:3191-3198
The sensitive detection of low-dose X-ray radiation is essential to many X-ray applications. In this article, the ultrasensitive X-ray detector based on pure Cs2AgBiBr6 all-inorganic lead-free perovskite film is successfully demonstrated and encapsul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271510b1e033b392fa2f672999238a14
https://doi.org/10.1109/ted.2020.2998763
https://doi.org/10.1109/ted.2020.2998763
Autor:
Fangwei Wang, Xiaoshi Li, He Tian, Yunfei Zhao, Thomas Hirtz, Jinming Jian, Tian-Ling Ren, Fan Wu, Yao Zhi, Guang-Yang Gou, Yancong Qiao, Yi Yang
Publikováno v:
ACS Nano. 14:3779-3804
Thermoacoustic (TA) effect has been discovered for more than 130 years. However, limited by the material characteristics, the performance of a TA sound source could not be compared with magnetoelectric and piezoelectric loudspeakers. Recently, graphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4906151532e477b2c8acbc177d78549e
https://doi.org/10.1021/acsnano.9b10020
https://doi.org/10.1021/acsnano.9b10020
Autor:
Dan Xie, Thomas Hirtz, Jun Ren, Hainan Zhang, Guanhua Dun, Xiangshun Geng, Renrong Liang, Yi Yang, Rui Zhao, He Tian, Zhaoyi Yan, Qixin Feng, Tian-Ling Ren
Publikováno v:
IEEE Electron Device Letters. 41:256-259
Organolead halide perovskites provide tremendous opportunities for ideal radiation detection due to their high atomic numbers, large carrier mobilities, and long lifetimes. Here, we synthesized high-quality single crystal CH3NH3PbBr3 with a high mobi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a021db9fb86111f3f92800b674b46ad2
https://doi.org/10.1109/led.2019.2960384
https://doi.org/10.1109/led.2019.2960384
Autor:
He Tian, Yao Zhi, Tian-Ling Ren, Yancong Qiao, Fan Wu, Yi Yang, Ge Deng, Thomas Hirtz, Xiaoshi Li
Publikováno v:
ACS Applied Electronic Materials. 2:346-370
Memristors with simple two-terminal structures have great potential for use in high-density memory and neuromorphic devices. Many neuromorphic behaviors can be imitated using a two-terminal device....
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ddadb15e360776cafb1e7fed0c8e6f
https://doi.org/10.1021/acsaelm.9b00655
https://doi.org/10.1021/acsaelm.9b00655
Autor:
Yang Shen, Mingrui Li, He Tian, Ge Deng, Yancong Qiao, Shourui Ji, Fan Wu, Yuhong Wei, Yi Yang, Jinming Jian, Qi Wu, Thomas Hirtz, Xiaoshi Li, Tian-Ling Ren
Publikováno v:
Nanoscale. 11:18923-18945
The human body is a "delicate machine" full of sensors such as the fingers, nose, and mouth. In addition, numerous physiological signals are being created every moment, which can reflect the condition of the body. The quality and the quantity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ebeb9580f406cb5c530d6a9215ff093
https://doi.org/10.1039/c9nr05532k
https://doi.org/10.1039/c9nr05532k
Autor:
Guang-Yang Gou, Yancong Qiao, Yuhong Wei, Yi Yang, Thomas Hirtz, Yang Jingming, Guangya Jiang, Si-Fan Yang, He Tian, Xue-Feng Wang, Fan Wu, Tian-Ling Ren
Publikováno v:
Nanoscale Advances. 1:4745-4754
In recent years, flexible light-emitting devices (LEDs) have become the main focus in the field of display technology. Graphene, a two-dimensional layered material, has attracted great interest in LEDs due to its excellent properties. However, there
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f95c3a99add703ee07043f601de35bb
https://doi.org/10.1039/c9na00550a
https://doi.org/10.1039/c9na00550a
Autor:
Fan Wu, He Tian, Yang Shen, Zheng‐Qiang Zhu, Yanming Liu, Thomas Hirtz, Rui Wu, Guangyang Gou, Yancong Qiao, Yi Yang, Chao‐Yang Xing, Gang Zhang, Tian‐Ling Ren
Publikováno v:
Advanced Materials Interfaces. 9:2200409
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17f90c3c1cf9821da3e075aea1eb3e3
https://doi.org/10.1002/admi.202200409
https://doi.org/10.1002/admi.202200409