Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Thomas Henning Loeber"'
Autor:
Johannes M. Richter, Christoph Doering, Henning Fouckhardt, Thomas Henning Loeber, Johannes Strassner
Publikováno v:
Advances in Materials Science and Engineering, Vol 2021 (2021)
We present a study of optoelectronically active Ga(As)As quantum dots (QDs) on Al-rich AlxGa1-xAs layers with Al concentrations up to x = 90%. So far, however, it has not been possible to grow optoelectronically active Ga(As)As QDs epitaxially direct
Publikováno v:
Advances in OptoElectronics, Vol 2018 (2018)
III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained atte
Publikováno v:
SPIE Proceedings.
Ga(Sb)As quantum dots (QDs) are usually grown on plane GaAs substrates by self-organization in the StranskiKrastanov mode. Here we report on Ga(As)Sb QD growth on a pre-structured GaAs substrate to achieve highly ordered QDs. The structure consists o
Autor:
Daniel Braam, Dieter Bimberg, Axel Lorke, Johannes M. Richter, T. Nowozin, Johannes Strassner, Thomas Henning Loeber, Leo Bonato, Henning Fouckhardt
Publikováno v:
Journal of Crystal Growth. 404:48-53
We report on the epitaxial growth of GaSb quantum dots (QDs) that show photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of up to 710 meV with a capture cross-section of 1×10 −13 cm 2 . The QDs were grown in S
Publikováno v:
Advanced Materials Research. 684:285-289
Two different approaches are pursued to realize densely packed gallium (arsenic) antimonide (Ga(As)Sb) quantum dots (QDs) for efficient QD lasers. In the first method nano¬structures are realized by self-organization using mask-less dry-etching. GaS
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 2, Iss 1, Pp 333-338 (2011)
Beilstein Journal of Nanotechnology, Vol 2, Iss 1, Pp 333-338 (2011)
GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 an
Autor:
Tilmann Beck, Gabriele Steidl, Thomas Henning Loeber, Frank Balle, Sebastian Schuff, Dietmar Eifler, Bert Laegel, Jan Henrik Fitschen, Sandra Wolff
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:06GK01
In the last two decades, focused ion beam (FIB) systems have been used for sample preparation. For example, the edges of a sample can be polished for analytical measurements or continuous cross-sections can be milled for three-dimensional (3D) tomogr
Publikováno v:
SPIE Proceedings.
Ga(As)Sb quantum dots (QDs) are grown on GaAs substrate in the Stranski-Krastanov mode. The molecular beam epitaxial (MBE) growth is monitored by reflectance anisotropy spectroscopy (RAS). For certain photon energies of the light used for RAS, the RA
Publikováno v:
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.
Summary form only given. We report on Ga(As)Sb/GaAs quantum dots (QDs) for use in efficient QD lasers. The emission wavelength can be chosen with the variation of the growth temperature and the Sb/Ga V/III partial pressure flux ratio. As can be seen
Autor:
Christina Kimmle, Carina Heisel, Johannes M. Richter, Henning Fouckhardt, Thomas Henning Loeber, Johannes Strassner
Publikováno v:
SPIE Proceedings.
Ga(As)Sb quantum dots (QDs) are epitaxially grown in AlGaAs/GaAs in the Stranski-Krastanov mode. In the recent past we achieved Ga(As)Sb QDs in GaAs with an extremely high dot density of 9.8∙10 10 cm -2 by optimization of growth temperature, Sb/Ga