Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Thomas Hackbarth"'
Autor:
Sergiy Durov, Oleg A. Mironov, Maksym Myronov, Terence E. Whall, Thomas Hackbarth, Georg Hoeck, Hans-Joest Herzog, Ulf Konig, Hans von Kanel
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I-V characteris
Externí odkaz:
https://doaj.org/article/1a95d2d301aa4d8d935f1d7ccefe28cc
Autor:
H. Trinkaus, Thomas Hackbarth, St. Lenk, H-J Herzog, Bernhard Holländer, S. Mantl, Paulo Fernando Papaleo Fichtner, D. Kirch, Martina Luysberg
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f607755544192f886213d1780c5374
https://doi.org/10.1201/9781351074629-37
https://doi.org/10.1201/9781351074629-37
Publikováno v:
Solid-State Electronics. 53:626-629
The low frequency (1/f) noise characteristics of Schottky-gated strained-Si n-channel modulation doped field effect transistors have been investigated as a function of Ge concentration for different virtual substrates. The gate voltage dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51310be2dccdbecead947244ca6f7173
https://doi.org/10.1016/j.sse.2009.03.022
https://doi.org/10.1016/j.sse.2009.03.022
Publikováno v:
Japanese Journal of Applied Physics. 46:4011-4015
The 1/ f noise in insulated gate strained Si n-channel modulation doped field effect transistors (MOSMODFETs) and in control Si metal–oxide–semiconductor FETs (MOSFETs) has been studied at gate voltages below and above the threshold. All transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f45629f438275ee63435a97ed831863
https://doi.org/10.1143/jjap.46.4011
https://doi.org/10.1143/jjap.46.4011
Publikováno v:
Solid-State Electronics. 51:449-459
The influence of parasitic capacitance on high frequency performances of SiGe n-HFET is reported. These capacitances arising from the fringe and electrostatic contributions of the gate are extracted from HF measurements and estimated with a 2D hydrod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cca3aa6e1a80042aadccf4b12c88254
https://doi.org/10.1016/j.sse.2007.01.027
https://doi.org/10.1016/j.sse.2007.01.027
Publikováno v:
ECS Transactions. 3:989-999
Recent advances of Si/SiGe strained layer heteroepitaxy on virtual substrates have paved the road to high speed Sibased nand p-channel HFETs with excellent RF and microwave noise performance [1]-[2]. One can expect a great improvement on microwave pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35d77d00f60f05615bdc0afc02062dbc
https://doi.org/10.1149/1.2355893
https://doi.org/10.1149/1.2355893
Publikováno v:
IEEE Transactions on Electron Devices. 52:2409-2415
Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel fabricated on several virtual substrates are discussed. The impact of such strain relieved buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01371a742c8e86625d6abeb8c31bbbc
https://doi.org/10.1109/ted.2005.857170
https://doi.org/10.1109/ted.2005.857170
Publikováno v:
IEEE Transactions on Electron Devices. 52:2067-2074
N-type Schottky-gated Si:SiGe heterostructure field-effect transistors with physical gate lengths between 70 and 450nm are characterized over a wide temperature range (T=10 K...300 K) for low electric fields. The room-temperature maximum low-field tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fe24b9af0d887a00c166ec9a729b285
https://doi.org/10.1109/ted.2005.855059
https://doi.org/10.1109/ted.2005.855059
Autor:
Daniel Chrastina, Elisabeth Müller, J. Stangl, Thomas Hackbarth, E. Wintersberger, H. von Känel, Z. Zhong, B. Rössner, Giovanni Isella, Monica Bollani
Publikováno v:
Journal of Crystal Growth. 281:281-289
We present a method to produce thin SiGe virtual substrates suitable for electronic applications. This method is based on the gas phase process of low-energy plasma-enhanced chemical vapor deposition. The strain-relaxed buffers are characterized by X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ed3b879fe965c825cdbe9e3c39229b4
https://doi.org/10.1016/j.jcrysgro.2005.04.040
https://doi.org/10.1016/j.jcrysgro.2005.04.040
Autor:
Thomas Hackbarth, Olivier Llopis, A. Rennane, G. Cibiel, Jacques Graffeuil, Robert Plana, L. Bary
Publikováno v:
Materials Science in Semiconductor Processing. 8:383-388
This paper presents an investigation of the low-frequency noise properties of SiGe-based on n-MODFETs through the characterization of both the gate current noise and the drain current noise, including their correlation. Measurements vs. bias and gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8958671994220567bc7c36ca19b9375c
https://doi.org/10.1016/j.mssp.2004.09.107
https://doi.org/10.1016/j.mssp.2004.09.107