Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Thomas Gubiotti"'
Autor:
Shinichi Kojima, Christopher F. Bevis, Thomas Gubiotti, Alan D. Brodie, Mark A. McCord, Luca Grella
Publikováno v:
Alternative Lithographic Technologies V.
Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-vol
Autor:
Regina Freed, William M. Tong, Thomas Gubiotti, Christopher F. Bevis, Jason Yang, Jeff Sun, Allen Carroll, Alan D. Brodie, Francoise Kidwingira, Shy-Jay Lin, Wen-Chuan Wang, Luc Haspeslagh, Bart Vereecke
Publikováno v:
Alternative Lithographic Technologies V.
Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-vol
Autor:
Mark A. McCord, Upendra Ummethala, Thomas Gubiotti, Jeff Sun, Jason Yang, Anthony Cheung, Paul Petric, Allen Carroll, Christopher F. Bevis, John J. Hench, Regina Freed, Shinichi Kojima, Walter D. Mieher, Layton C. Hale
Publikováno v:
SPIE Proceedings.
Maskless electron beam lithography has the potential to extend semiconductor manufacturing to the sub-10 nm technology node. KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL) for high-volume 10 nm logic (16 nm HP). This p
Autor:
Shy-Jay Lin, Jeff Sun, Walter D. Mieher, Christopher F. Bevis, Upendra Ummethala, Thomas Gubiotti, Francoise Kidwingira, Layton C. Hale, Regina Freed, Shinichi Kojima, John J. Hench, Wen-Chuan Wang, Jason Yang
Publikováno v:
Alternative Lithographic Technologies IV.
Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 16 nm technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) targeting high-volume 16 nm half pitch (HP) production
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
In an effort to keep scaling at the speed of Moore's law, novel methods are being developed to facilitate advanced semiconductor manufacturing at the 32nm node and beyond. One such method for enabling the creation of dense pitches beyond the current
Publikováno v:
Process and Materials Characterization and Diagnostics in IC Manufacturing.
Ion beam implantation of silicon with hydrogen is a method of producing thin silicon films for the manufacture of silicon on insulator (SOI) wafers. The implanted hydrogen depth profiles are traditionally measured using nuclear reaction analysis (NRA
Publikováno v:
SPIE Proceedings.
We report here on initial results for the characterization and modeling of 100 nm lithography features based on normal incidence spectroscopic ellipsometry and polarized reflectometry. In this work, a set of wafers was exposed as focus-exposure and s
Autor:
Kirk Murray, Anil U. Mane, Mark A. McCord, Jeffrey W. Elam, Shinichi Kojima, Paul Petric, Thomas Gubiotti, William M. Tong, Bart Vereecke, Alan D. Brodie, Christopher F. Bevis, Luca Grella, Francoise Kidwingira, Allen Carroll, Fuge Sun, Luc Haspeslagh
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 12:031107
The digital pattern generator (DPG) is a complex electron-optical MEMS that pixelates the electron beam in the reflective electron beam lithography (REBL) e-beam column. It potentially enables massively parallel printing, which could make REBL compet
Publikováno v:
2016 Design, Automation & Test in Europe Conference & Exhibition (DATE); 2016, p285-288, 4p